Resolution limit of negative tone chemically amplified resist used for hybrid lithography: Influence of the molecular weight

Abstract

The objective of this article was to study the resolution limits of different negative tone chemically amplified resists from both commercial and experimental formulations. Process optimization has been done on all samples and this work underlines the importance of the choice of bake temperature to push resists to their ultimate resolution. Furthermore, the influence of several compounds, such as the polymer matrix blend, molecular weight, and photoacid compound, is detailed to determine the influence of each parameter on the final formulation performance.

Advanced experimental techniques in polymer thermodynamics

“…The great selectivity of TMDSC for asserting glasstransition temperatures T g has been shown in the case of resins used for nanolithography, in several microelectronics applications {see for example references [21][22][23]} and in the case of polymers used for polymer foaming [24]. This TMDSC selectivity will be illustrated with one example: T g determination by TMDSC of polystyrene modified by high-pressure methane.…”

Hybrid high resolution lithography (e-beam/deep ultraviolet) and etch process for the fabrication of stacked nanowire metal oxide semiconductor field effect transistors

“…2͒. 6 Next, the Si 3 N 4 hard mask and Si/ SiGe superlattices are anisotropically etched to define the stacked nanowire width. Then, SiGe layers are selectively removed in order to release the Si suspended stacked nanowires.…”

“…2͒. 6 For this purpose, we use chemically amplified resists which have the advantage of being fully compatible with both types of exposure. 7,8 Experiments were performed with the NEB-35 formulation from Sumitomo Chemical.…”

Hybrid lithography process for nano-scale devices

“…These resists have the advantage of being fully compatible with e-beam and optical lithography, hence their utilization to perform hybrid (e-beam/DUV) lithography process. The aim of hybrid lithography is to combine the high resolution of e-beam lithography and the high throughput of optical lithography to decrease wafer exposure time [2]. This paper presents development works on Sumitomo negative CAR new formulations NEB-35 to achieve FINFET transistors by hybrid lithography [3].…”