Resonant tunneling between thermal excited states tuned by a magnetic field

Vieira, G. S.; Feu, W. H. M.; Villas‐Bôas, J. M.; Guimarães, P. S. S.; Studart, Nélson

doi:10.1103/physrevb.75.193406

Cited by 3 publications

(1 citation statement)

References 23 publications

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“…1 In asymmetrical QW structures, the in-plane field induces a diamagnetic shift of each electron subband in k-space, 1 which becomes important in tunneling between coupled QWs (see, e.g., Refs. [2,3,4,5,6]) and direct optical transitions, 7,8,9,10,11 and can also modify the electron-phonon interaction. 12,13 Here we address the effect of an external magnetic field applied in the interface plane on the electron scattering in quantum wells.…”

Section: Introductionmentioning

confidence: 99%

Electron scattering in quantum wells subjected to an in-plane magnetic field

Tarasenko

2008

Phys. Rev. B

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It is shown that the electron scattering by static defects, acoustic or optical phonons in quantum wells subjected to an in-plane magnetic field is asymmetric. The probability of scattering contains terms which are proportional to both the electron wave vector and the magnetic field components.The terms under study are caused by the lack of an inversion center in quantum wells due to structure or bulk inversion asymmetry although they are of pure diamagnetic origin. Such a magnetic field induced asymmetry of scattering can be responsible for a number of phenomena. In particular, the asymmetry of inelastic electron-phonon interaction leads to an electric current flow if only the electron gas is driven out of thermal equilibrium with the crystal lattice.

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Section: Introductionmentioning

confidence: 99%

Electron scattering in quantum wells subjected to an in-plane magnetic field

Tarasenko

2008

Phys. Rev. B

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Effect of electric field non-uniformity on the differences between I-V characteristics of QWIP devices fabricated on the same wafer

Santos

Vieira

Delfino³

et al. 2020

Sensors and Actuators A: Physical

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Electron scattering in GaAs/InGaAs quantum wells subjected to an in-plane magnetic field

Yang

Zhang

et al. 2013

Journal of Applied Physics

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We study theoretically the effect of the in-plane magnetic field on two-dimensional electron gas transport in GaAs/InGaAs single quantum well structure. Our results show that, due to the scatterers (GaSb quantum dots) are one-side distributed, the in-plane magnetic field leads to an anisotropic scattering probability, which results in a higher mobility along the direction perpendicular to the magnetic field. Besides, compared with the no magnetic field case, the mobility shows a parabolic increasing trend as the in-plane magnetic field strength increases.

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Resonant tunneling between thermal excited states tuned by a magnetic field

Cited by 3 publications

References 23 publications

Electron scattering in quantum wells subjected to an in-plane magnetic field

Electron scattering in quantum wells subjected to an in-plane magnetic field

Effect of electric field non-uniformity on the differences between I-V characteristics of QWIP devices fabricated on the same wafer

Electron scattering in GaAs/InGaAs quantum wells subjected to an in-plane magnetic field

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