Resonant Tunneling Diodes-Based Cellular Nonlinear Networks with Fault Tolerance Analysis

Abstract

The resonant tunneling diodes (RTD) have found numerous applications in high-speed digital and analog circuits owing to its folded-back negative differential resistance (NDR) in current-voltage (I-V) characteristics and nanometer size. On account of the replacement of the state resistor in standard cell by an RTD, an RTD-based cellular neural/nonlinear network (RTD-CNN) can be obtained, in which the cell requires neither self-feedback nor a nonlinear output, thereby being more compact and versatile. This paper addresses the structure of RTD-CNN in detail and investigates its fault-tolerant properties in image processing taking horizontal line detection and edge extraction, for examples. A series of computer simulations demonstrates the promising fault-tolerant abilities of the RTD-CNN.

A spintronic memristor crossbar array for fuzzy control with application in the water valves control system

“…2 Henceforth, this caused the wide attention in both academia and industry. A memristor is a passive two-terminal nonlinear component, 3 and it has huge potential in nonvolatile memory, 4,5 large-scale integrated circuit, 6 biological bionics, 7 artificial neural networks, 8 pattern recognition, 9,10 picture processing, 11–13 and chaotic circuits. 14 Because of its unique switch mechanism, natural memory function, continuous input and output characteristics, and nanoscale size, the memristive effect of HP memristor was achieved in a solid-state thin film two-terminal device by moving the doping front along the device.…”