Resonant tunneling through traps in Schottky barriers

Sarrabayrouse, G.; Buxo, J.; Estève, D.

doi:10.1051/jphys:0197700380110144300

Cited by 12 publications

(1 citation statement)

References 17 publications

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“…With these results one can compare both assisted and direct tunneling conduction mechanisms making evident the relevant role played by resonant tunneling in Schottky structures. An analysis within the two-step approximation using the Green's function formalism has been perfornied by Sarrabayrouse et al [4] approximating the bottom of the conduction band in the depletion layer by a straight line, obtaining the resonant tunneling current in a reversely biased AsGa Schottky diode. Other works on resonant tunneling exist in the literature [5, 61.…”

Section: Introductionmentioning

confidence: 99%

Trap-Assisted Tunneling in MIS and Schottky Structures

Campabadal

Milian

Aymerich

1983

Phys. Stat. Sol. (a)

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Trap-assisted tunneling current in metal-insulator-semiconductor and metal-semiconductor (Schottky) structures with traps in the insulator and in the semiconductor, respectively, is obtained, using the stationary resonance model. The two-band model is considered for the insulator gap of the MIS structure, introducing an effective potential barrier. A comparison between resonant and direct tunneling currents in MIS structures is performed, showing that the main conduction mechanisms is determined by the trap density, the oxide thickness, and the trap depth. For the Schottky diodes, the resonant current-voltage characteristic is analysed as function of the centre of resonance of the system. A discussion between resonant tunneling in MIS and Schottky structures is also included. Der durch Haftstellen unterstutzte Tunnelstrom in Metall-Isolator-Halbleiterund Metall-Halbleiter(Schottky)-Strukturen mit Haftstellen im Isolator bzw. Halbleiter wird mit dem stationtiren Resonanzmodell erhalten. Fur die Isolatorliicke wird das Zwei-Bandmodell benutzt und eine effektive Potentialbarriere eingefiihrt. Ein Vergleich zwischen den resonanten und direkten Tunnelstromen in den MIS-Strukturen wird durchgefiihrt und gczeigt, da13 der Hauptmechanismus der Leitung durch die Haftstellendichte, die Oxiddicke und die Haftstellentiefe bestimmt wird. Fur die Schottky-Dioden wird die resonante Strom-Spannungscharakteristik in Abhtingigkeit vom Resonanzzentrum des Systems analysiert. Der Vergleich zwischen Resonanz-Tunnelung in MISund Schottky-Strukturen wird diskutiert.

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Section: Introductionmentioning

confidence: 99%

Trap-Assisted Tunneling in MIS and Schottky Structures

Campabadal

Milian

Aymerich

1983

Phys. Stat. Sol. (a)

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Resonant tunneling current for general junction potential barrier

Aymerich¹,

Serra‐Mestres²

1979

Phys. Stat. Sol. (a)

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A three‐dimensional treatment of the resonant tunneling current assisted by short‐range potential traps is discussed by means of a steady‐state formulation. A new resonance approximation is suggested in the scattering operator, obtaining a simple expression for the resonant current in terms of the one‐dimensional Green's function potential barrier. This expression does not depend on the short‐range trap potential. The results are even valid for large values of resonant shift with respect to the trap level.

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