Resonant tunneling transistor lasers: A new approach to obtain multi-state switching and bistable operation

Jain, F.; Chung, C.; LaComb, R.; Gokhale, M. H.

doi:10.1007/bf02146259

Cited by 3 publications

(2 citation statements)

References 20 publications

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“…Different from monolithically integrating a transistor and a laser diode, either in-plane [4] or vertically [5], where the transistor performs as the electrical driver of the laser, transistor lasers use the base recombination to provide stimulated emission. Early works on transistor lasers include a conceptual proposal of quantum well (QW) transistor lasers [6] and experimental demonstration of a laser transistor [7] that could function as a laser and a transistor in separate states. The recently developed QW transistor laser [1] has two independent control signals and can simultaneously output an electrical signal and an optical signal.…”

Section: Introductionmentioning

confidence: 99%

“…recombination to provide stimulated emission. Early works on transistor lasers include a conceptual proposal of quantum well (QW) transistor lasers [6] and experimental demonstration of a laser transistor [7] that could function as a laser and a transistor in separate states. The recently developed QW transistor laser [1] has two independent control signals and can simultaneously output an electrical signal and an optical signal.…”

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confidence: 99%

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Invited Paper: Design and modeling of a transistor vertical-cavity surface-emitting laser

et al. 2011

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A multiple quantum well (MQW) transistor vertical-cavity surfaceemitting laser (T-VCSEL) is designed and numerically modeled. The important physical models and parameters are discussed and validated by modeling a conventional VCSEL and comparing the results with the experiment. The quantum capture/escape process is simulated using the quantum-trap model and shows a significant effect on the electrical output of the T-VCSEL. The parameters extracted from the numerical simulation are imported into the analytic modeling to predict the frequency response and simulate the large-signal modulation up to 40 Gbps.

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Section: Introductionmentioning

confidence: 99%

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confidence: 99%

Invited Paper: Design and modeling of a transistor vertical-cavity surface-emitting laser

et al. 2011

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Temperature performance of the edge emitting transistor laser

Liu

Zhu

Kong

et al. 2011

Applied Physics Letters

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The characteristic temperature (T0) of the edge emitting transistor laser (TL) is studied numerically. For the deep-ridge TL, the common base (CB) mode characteristic temperature (T0,CB) is a lot lower than the common emitter (CE) mode characteristic temperature (T0,CE), which is comparable to a conventional laser. This is resulted from the increase of the emitter to base current gain with the base current, which amplifies the increase of the CB threshold current with temperature. For the shallow-ridge TL, the T0,CE is found to be also rather low and is only slightly higher than the T0,CB. This can be attributed to the large fraction of electron current in the total base current, which is related to the large thickness of base layer and the insertion of quantum wells in the TL.

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Monolithic integration of red, blue, and green lasers for smart projection displays

et al. 1997

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Abstract— Novel device structures integrating multiple‐output lasers emitting in red, green, and blue colors are proposed. Active layers emitting red (AlGaAs or InGaAlP), blue (ZnxCd1−xSe), and green (ZnyCd1−ySe) are shown to be integrated monolithically on GaAs substrates using conventional p‐n tunnel junctions and asymmetric resonant tunneling structures. Both edge‐ and surface‐emitting structures are described. Experimental characteristics of two red‐emitting Al0.16Ga0.84As‐Al0.45Ga0.55As‐GaAs lasers, integrated in tandem via a low‐voltage‐drop tunnel junction are presented, demonstrating the feasibility of monolithic integration. Blue‐green lasers are shown to operate at lower voltages using asymmetric resonant tunneling structures between p‐GaAs/p‐ZnSe layers. Integration of surface‐emitting lasers including folded‐cavity and Distributed Bragg Reflector (DBR) structures is also presented along with simulation of electrical and optical characteristics. An integrated pixel‐addressing methodology is described for smart projection displays.

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Resonant tunneling transistor lasers: A new approach to obtain multi-state switching and bistable operation

Cited by 3 publications

References 20 publications

Invited Paper: Design and modeling of a transistor vertical-cavity surface-emitting laser

Invited Paper: Design and modeling of a transistor vertical-cavity surface-emitting laser

Temperature performance of the edge emitting transistor laser

Monolithic integration of red, blue, and green lasers for smart projection displays

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