Restive Feedback Cascaded Ultra Low Noise Figure and High Gain Ku-Band LNA for Space Application

Murthy, B T Venkatesh; Shreyank, N P; K, Ranjan H; Power, V.; Kumar, Thanai M

doi:10.1109/icces48766.2020.9137983

Cited by 3 publications

(1 citation statement)

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“…The fundamental function of the LNA is an amplifying weak signal that has been received from the antenna and retains as high a possible signal-noise ratio (SNR) of the system whilst maintaining a low noise level. The performance of the LNA device has the advantage of being the most critical factor contributing to the downlink receiver Hub [2].…”

Section: Introductionmentioning

confidence: 99%

Improved performance HEMT device with backup bulk for LNA application

2023

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In this study, a 30 nm gate length double-gate InAlN/GaN on 4h-SiC substrate high-electron-mobility transistor is proposed. Different electrical characteristics such as DC, AC, capacity and noise analysis was performed through TCAD device simulations. The proposed device exhibited maximum drain current of 2.15 A/mm, transconductance of 1308 mS/mm, (350/ 610) GHz of FT/FMAX and maximum noise figure of NFMax=9.5 dB at 1 THz. Thus, the low noise high electron mobility transistor (LNA-HEMT) amplifier has been designed considering main characteristics of power with new structure, in terms of temperature and low noise figure effect. Adopting the backup bulk in the optimization procedure the proposed device obtained an outstanding performance with appropriate low power consumption for GEO satellite application

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Section: Introductionmentioning

confidence: 99%