Abstract:In an external magnetic field, the energy of massless charge carriers in graphene is quantized into non-equidistant degenerate Landau levels including a zero-energy level. This extraordinary electronic dispersion gives rise to a fundamentally new dynamics of optically excited carriers. Here, we review the state of the art of the relaxation dynamics in Landau-quantized graphene focusing on microscopic insights into possible many-particle relaxation channels. We investigate optical excitation into a non equilibrium distribution followed by ultrafast carriercarrier and carrier-phonon scattering processes. We reveal that surprisingly the Auger scattering dominates the relaxation dynamics in spite of the non-equidistant Landau quantization in graphene. Furthermore, we demonstrate how technologically relevant carrier multiplication can be achieved and discuss the possibility of optical gain in Landau-quantized graphene. The provided microscopic view on elementary many-particle processes can guide future experimental studies aiming at the design of novel graphene-based optoelectronic devices, such as highly efficient photodetectors, solar cells, and spectrally broad Landau level lasers.
MotivationWith an ever-growing impact of technology on everyday life, the importance of semiconductor physics has constantly increased since the information revolution. Of particular interest is the field of optoelectronics enabling key technologies for modern communication. The fast techno-*Corresponding Author: Ermin Malic: Department of Applied Physics, Chalmers University of Technology, Gothenburg, Sweden, E-mail: ermin.malic@chalmers.se Florian Wendler: Department of Applied Physics, Chalmers University of Technology, Gothenburg, Sweden, E-mail: florian.wendler@tu-berlin.de Andreas Knorr: Institute of Theoretical Physics, Nonlinear Optics and Quantum Electronics, Technical University Berlin, Germany logical progress is accompanied by the demand for materials with new optical and electronic properties. One of the most promising materials in this regard is graphene [1][2][3][4], which was first grown epitaxially on top of SiC [5], but it was not until Novoselov and Geim prepared samples by mechanical exfoliation and demonstrated a graphenebased field-effect transistor [6] in 2004 that it received wide-spread attention.Graphene as a single layer of carbon atoms is the thinnest known two-dimensional material [3,7]. It exhibits extraordinary optical, electronic, thermal, mechanical, and chemical properties [3]. In particular, its linear electronic dispersion in the low-energy regime near the Dirac points in the Brillouin zone is most remarkable. Here, electrons move as if they were massless, just like photons in quantum electrodynamics providing the possibility to test the predictions of relativistic quantum mechanics, such as Klein tunneling [8,9], in a small-scale table top experiment.Besides the fascinating fundamental physics that can be explored in graphene, several optoelectronic applications were proposed [1], ranging fr...