“…20 TMA is known to be a strong reducing agent, [27][28][29] which itself desires to be oxidized. The capability of TMA to reduce neighboring species has been the main cause of defect-rich interfaces, forming a two-dimensional electron gas (2DEG) between ALD-Al 2 O 3 and bottom binary oxides such as TiO 2 , 28,29 ZnO, 27,30 and In 2 O 3 . 31,32 Likewise, the quaternary oxide IGZO was chemically reduced when exposed to the ALD-Al 2 O 3 process, creating a defect-rich interface.…”