Reversible positive charge annealing in MOS transistor during variety of electrical and thermal stresses

Емельянов, В. В.; Зебрев, Г. И.; Ulimov, V.N.; Useinov, Rustem G.; Belyakov, V.V.; Першенков, В.С.

doi:10.1109/23.510716

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Cited by 13 publications

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“…For traps with small recharging time the equilibrium with the substrate would establish fast. These traps rapidly exchanged with the substrate are often referred as to the interface traps (N it ) (Emelianov et al 1996); (Fleetwood et al, 2008). Defects which do not have time to exchange charge with the substrate during the measurement time are referred to as oxide-trapped traps (N ot ).…”

Section: Gfet Electrostatics 31 Near-interfacial Rechargeable Oxide mentioning

confidence: 99%