Reversible pyroelectric and photogalvanic current in epitaxial Pb(Zr0.52Ti0.48)O3 thin films

Abstract

Electric field modulation of magnetism and electric properties in La-Ca-MnO3/Pb(Zr0.52Ti0.48)O3 magnetoelectric laminate J. Appl. Phys. 113, 17C712 (2013); 10.1063/1.4795871 Structure and properties of epitaxial perovskite Pb(Zr0.52Ti0.48)O3/La0.7Sr0.3MnO3 heterostructures

Short-circuit photocurrent in epitaxial lead zirconate-titanate thin films

“…Relatively few studies were reported on generation of photocurrents under UV illumination of the MFM structures. [24][25][26] It was even proposed to use these currents as a nondestructive readout of the nonvolatile memories based on ferroelectric PZT. 27 PHC was measured not only at wavelengths corresponding to fundamental absorption, i.e., below 400 nm, 24 but also at wavelengths below the band gap, e.g., 532 nm, which hints at the presence of impurity levels in the PZT forbidden band.…”

Enhanced thermodynamic stability of tetragonal-phase field in epitaxial Pb(Zr,Ti)O3 thin films under a two-dimensional compressive stress

“…Until now, however, these attempts have not been successful even with the compositions near the MPB. [1][2][3] In this letter, we have examined the reason behind the observed difficulty in the fabrication of the epitaxial PZT thin film in which the two phases coexist and developed a two-dimensional thermodynamic model for epitaxial ferroelectric thin films. This formulation based on the LandauDevonshire's phenomenological theory predicts an extension of the tetragonal-phase field under a two-dimensional compressive stress.…”

“…[1][2][3] Bulk polycrystalline PZT ceramics having the two-coexisting-phases can be easily fabricated by adjusting the ratio of Zr to Ti to near 52:48. A bulk PZT specimen in the vicinity of this composition is characterized by the morphotropic phase boundary ͑MPB͒ on which the two phases coexist without the solubility gap ͑not obeying the lever rule͒.…”

Transient photocurrents in lead zirconate titanate thin films

“…Recent investigations have shown that properties of these ferroelectric thin film capacitors can be evaluated by using illumination of the films in the ultraviolet ͑UV͒ and visible spectral ranges. [2][3][4][5][6][7] In particular, the direction and magnitude of ferroelectric polarization could be estimated by measuring the photocurrent response of the shortcircuited capacitors under pulsed or steady-state illumination. Fast photoresponse to the pulsed laser illumination is especially important for implementation of a nondestructive read out ͑NDRO͒ for future generations of ferroelectric memories.…”