2023
DOI: 10.1149/1945-7111/acb61a
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Review—Electrochemical Migration in Electronic Materials: Factors Affecting the Mechanism and Recent Strategies for Inhibition

Abstract: Electrochemical migration (ECM) is one of the serious failure modes encountered in electronic devices due to the electrochemical reactions triggered by the presence of moisture and bias voltage, leading to the growth of dendrites and short circuits. The classical ECM mechanism consists of four consecutive stages: (i) electrolyte formation, (ii) anodic dissolution, (iii) ion transport, and (iv) dendrite growth. ECM is a delicate process that involves a combination of a good number of factors, such as the electr… Show more

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Cited by 16 publications
(3 citation statements)
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“…2g), indicating the combined effect of PVP and Br − for controlling the morphology structure of AgNWs. 36 The results are consistent with that in Fig. 1.…”
Section: Resultssupporting
confidence: 91%
“…2g), indicating the combined effect of PVP and Br − for controlling the morphology structure of AgNWs. 36 The results are consistent with that in Fig. 1.…”
Section: Resultssupporting
confidence: 91%
“…The material composition (especially the metal concentration) of the dendritic structures have a significant influence on the conductivity and the chance of a breakdown event is higher in the presence of humidity [8]. This leads to another approach in measuring the blocking voltage, again after a soaking experiment under high relative humidity.…”
Section: Static Resultsmentioning
confidence: 99%
“…In general, Cu2O-dendrites on DBC-substrates covered with Si-gel are not reported as long as the adhesion is intact. Therefore, a classical ECM like described in [8] cannot explain the structure, because the Cu-ion itself is unable to reach the cathode to form a dendrite. Nevertheless, this secondary structure at the cathode is present after a short exposure to high relative humidity and high H2Sconcentrations.…”
Section: Figure 1: Mechanisms Of H2s-induced Corrosion At a Siliconeg...mentioning
confidence: 99%