2014
DOI: 10.12691/ajeee-2-4-2
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Review of Leakage Power Reduction in CMOS Circuits

Abstract: Recent Technological advances in Wireless Communication has shown the convergence of terminals and networks that support multimedia and real-time applications. This obviously puts an immense pressure on battery of any mobile device. The CMOS has been the leading technology in today's world of mobile communication due to its low power consumption. Reduction of leakage power in CMOS has been the research interest for the last couple of years. In CMOS integrated circuit design there is an important trade-off betw… Show more

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Cited by 5 publications
(5 citation statements)
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“…The voltage drop across R has two implications. Due to this bodily impact, the resistance value of LVT quick release transistors is raised due to a decrease in Vdd power rating and a rise in Vdd-Vx bodily impact pushing power [11] [12]. Consequently, the circuitry's resistor ought to have been minimal and the sleep transistors big in order to minimise those impacts.…”
Section: Methodsmentioning
confidence: 99%
“…The voltage drop across R has two implications. Due to this bodily impact, the resistance value of LVT quick release transistors is raised due to a decrease in Vdd power rating and a rise in Vdd-Vx bodily impact pushing power [11] [12]. Consequently, the circuitry's resistor ought to have been minimal and the sleep transistors big in order to minimise those impacts.…”
Section: Methodsmentioning
confidence: 99%
“…In CMOS nanoscale technology several methods are originated to overcome the problem of leakage in CMOS circuits [11].…”
Section: Leakage Reduction Techniquesmentioning
confidence: 99%
“…This method utilizes the sleep strategy and is one of the most frequently recognized outdated techniques for the decreasing of the sub-threshold leakage energy [15]. Additional transistors (sleep transistors) remain injected into the Power supply and Ground in this method [11].…”
Section: Sleep Mode Approachmentioning
confidence: 99%
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