Review of silicon-germanium BICMOS technology after 4 years of production and future directions

Subbana, S.; Freeman, G.; Ahlgren, D.; Jagannathan, B.; Greenberg, D.; Johnson, Jeff; Bacon, P.; Najarian, R.; Herman, D. A.; Meyeron, B.

doi:10.1109/gaas.2000.906262

Cited by 7 publications

(4 citation statements)

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“…Noting that at high frequencies G m and C Σ are reduced, respectively, to αC int /C Σ and C hf , one can express C int as G m .C hf /α, and re-write equation (2) in the form:…”

Section: Results Analyses and Discussionmentioning

confidence: 99%

“…Above all, SiGe can be grown on bulk silicon wafers, which is a big advantage in terms of compatibility with standard integrated circuit processing techniques. SiGe technologies, known for their high transconductance at low current, are particularly attractive for high frequency low noise amplifiers as well as power amplifiers since SiGe is believed to have several advantages over GaAs in terms mainly of reduced chip area, chip robustness and reliability at high current densities [1][2][3]. SiGe heterojunction bipolar transistors are considered, in this context, as non-expensive alternative to AlGaAs/GaAs-based power amplifiers, which are key components in the wireless communication applications [4].…”

Section: Introductionmentioning

confidence: 99%

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Characteristics of interface states in irradiated Pd/n-SiGe as derived from frequency- and temperature-dependent admittance

Sellai

Mamor

2012

2012 16th IEEE Mediterranean Electrotechnical Conference

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We have used, in this contribution, the measured frequency-dependent ac admittance of irradiated Pd/n-GaN Schottky contacts at different temperatures ranging from 100K to 300K to derive the admittance associated with the displacement current in the Pd/GaN interfacial layer. The normalized conductance versus frequency plots at various temperatures, are characterized essentially by the presence of peaks, which is seen as a signature and a direct evidence for the presence of interface traps. The magnitudes and frequency positions of these peaks allowed the determination of the density and the energy distribution of interface traps as well as the thermal emission rates of carriers from traps and, hence, their capture cross-section.

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“…Noting that at high frequencies G m and C Σ are reduced, respectively, to αC int /C Σ and C hf , one can express C int as G m .C hf /α, and re-write equation (2) in the form:…”

Section: Results Analyses and Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Characteristics of interface states in irradiated Pd/n-SiGe as derived from frequency- and temperature-dependent admittance

Sellai

Mamor

2012

2012 16th IEEE Mediterranean Electrotechnical Conference

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“…More recently, the growth of the wireless networking and mobile telephone markets, with their requirement for low-power, inexpensive, highly integrated RF systems, has further driven developments in silicon CMOS, as well as creating a new Silicon Germanium (SiGe) process which adds heterojunction bipolar transistors (HBTs) to a standard CMOS process (Subbana et al, 2000). Enormous resources have been invested in CMOS over the last two decades in order to improve digital logic speed and levels of integration.…”

Section: Cmos For Rfmentioning

confidence: 99%

RF Design of a Wideband CMOS Integrated Receiver for Phased Array Applications

Jackson

2004

Exp Astron

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New silicon CMOS processes developed primarily for the burgeoning wireless networking market offer significant promise as a vehicle for the implementation of highly integrated receivers, especially at the lower end of the frequency range proposed for the Square Kilometre Array (SKA). An RF-CMOS 'Receiver-on-a-Chip' is being developed as part of an Australia Telescope program looking at technologies associated with the SKA. The receiver covers the frequency range 500-1700 MHz, with instantaneous IF bandwidth of 500 MHz and, on simulation, yields an input noise temperature of <50 K at mid-band. The receiver will contain all active circuitry (LNA, bandpass filter, quadrature mixer, anti-aliasing filter, digitiser and serialiser) on one 0.18 µm RF-CMOS integrated circuit. This paper outlines receiver front-end development work undertaken to date, including design and simulation of an LNA using noise cancelling techniques to achieve a wideband input-power-match with little noise penalty.

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“…SiGe bases for NPN and PNP are formed in an unselective epitaxial process that grows monocrystalline SiGe in mono-crystalline base windows, while growing poly-crystalline on oxide and 1st poly regions. Both bipolar transistors are pseudo-HBTs[9]. Germanium profiles are designed for high 1*VA products.…”

mentioning

confidence: 99%