2017
DOI: 10.7567/jjap.57.01ab04
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RF plasma cleaning of silicon substrates with high-density polyethylene contamination

Abstract: Upon contact with a polymeric material, microparticles from the polymer may adhere to a silicon (Si) substrate during device processing. The adhesion contaminates the surface and, in turn, leads to defects in the fabricated Si-based microelectronic devices. In this study, Si substrates with artificially induced high-density polyethylene (HDPE) contamination was exposed to 13.56 MHz radio frequency (RF) plasma utilizing argon and oxygen gas admixtures at a power density of 5.6 W/cm 2 and a working pressure of 1… Show more

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Cited by 8 publications
(6 citation statements)
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“…[29] (E) the plot of the ratio IT/I0 as a function of electron beam exposure time for electropolished stainless steel before and after plasma cleaning in O 2 /Ar mixture. [33] (F) Percent surface coverage of HDPE contaminants on the Si samples before and after plasma treatment [32] that of the sample treated with He/O 2 plasma, as shown by the SEM in Figure 3C. It demonstrates that O 2 and N 2 plasma have a synergistic effect and can improve oxidation capacity.…”
Section: Surface Etchingmentioning
confidence: 95%
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“…[29] (E) the plot of the ratio IT/I0 as a function of electron beam exposure time for electropolished stainless steel before and after plasma cleaning in O 2 /Ar mixture. [33] (F) Percent surface coverage of HDPE contaminants on the Si samples before and after plasma treatment [32] that of the sample treated with He/O 2 plasma, as shown by the SEM in Figure 3C. It demonstrates that O 2 and N 2 plasma have a synergistic effect and can improve oxidation capacity.…”
Section: Surface Etchingmentioning
confidence: 95%
“…[31] After 10 min of multicomponent plasma cleaning, there is no accumulation of pollutants. When Ar/O 2 RF plasma is used to clean the contaminated silicon substrate with HDPE, [32] the pollutant coverage rate on the substrate surface is reduced, as revealed in Figure 2F, indicating that a cleaning effect has been F I G U R E 1 Schematic diagram of cleaning, etching and functionalization of multicomponent plasma. (A) SiO 2 cleaning under OF 2 /NH 3 mixture plasma.…”
Section: Surface Cleaningmentioning
confidence: 99%
“…These processes have the advantage of being fast, versatile, and effective. Plasma cleans the surface by inducing physical damage (sputtering) or/and chemical reactions between the contaminant and reactive plasma species, turning contaminants into volatile compounds. , Consequently, plasma has been successfully employed for surface cleaning of the substrate before 2D TMD growth and nanodevice fabrication. …”
Section: Growth Substrate Modificationmentioning
confidence: 99%
“…The presence of any type of contamination on the substrate negatively affects the deposition of the subsequent layers, reduces the adhesion quality, induces voids between the substrate and the upper layer, and forms electrical defects. 702,703 So far, various wetcleaning and dry-cleaning procedures have been utilized in order to attain clean substrates. 704−706 Due to safety issues and processability, the dry processes have gained much more attention in recent years.…”
Section: Cleaningmentioning
confidence: 99%
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