Nuclear Instruments and Methods in Physics Research Section B:
1995
DOI: 10.1016/0168-583x(95)00704-0
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Role of defects during amorphization and relaxation processes in Si

Teruaki Motooka
1
,
Y. Hiroyama
2
,
Ryoichi Suzuki3
et al.
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Cited by 9 publications
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References 16 publications
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Recrystallization of He-ion implanted 6H-SiC upon annealing

Li
1
,
Du
2
,
Wang
3
2015
Nuclear Instruments and Methods in Physics Research Section B:
26
0
14
0
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Recrystallization of He-ion implanted 6H-SiC upon annealing

Li
1
,
Du
2
,
Wang
3
2015
Nuclear Instruments and Methods in Physics Research Section B:
26
0
14
0
View full textAdd to dashboardCite

The effect of cavities on recrystallization growth of high-fluence He implanted-SiC

Zhang
1
,
He
2
,
Chen
3
et al. 2021
Nuclear Instruments and Methods in Physics Research Section B:
4
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Amorphization and solid phase epitaxy of high-energy ion implanted 6H-SiC

Ishimaru
1
,
Harada
2
,
Motooka
3
et al. 1997
Nuclear Instruments and Methods in Physics Research Section B:
22
2
7
0
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