Role of substrate temperature on the structural, optoelectronic and morphological properties of (400) oriented indium tin oxide thin films deposited using RF sputtering technique

Malathy, V.; Sivaranjani, S.; Vidhya, V.S.; Balasubramanian, T.; Prince, J. Joseph; Sanjeeviraja, C.; Jayachandran, M.

doi:10.1007/s10854-010-0066-2

Cited by 7 publications

(7 citation statements)

References 36 publications

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“…7 The ∆a value was positive for all the samples, which shows a strong confirmation for the lattice expansions in the ITO films. These results are supported by those reported by Malathy et al 7 and Zhang et al 17 Compared to the sample Ar and Ar+O 2 , the lattice constant of the three-gas sample film was decreased, which provides additional evidence that the hydrogen atoms were positioned in the indium oxide lattice. It confirmed the decrement was due to the presence of hydrogen atoms in the ITO films.…”

Section: Resultssupporting

confidence: 58%

“…It is evident from these results that the Sn atoms occupy the substitution sites of the indium atoms. 7 This indicates the different ambient combinations sputtered ITO films are in the pure form and no other phases are observed in the XRD pattern. Film (1) deposited under Ar ambient exhibited the (400) plane, while the addition of Ar+O 2 in film (2) has changed its preferential orientation along (400) into (222).…”

Section: Resultsmentioning

confidence: 92%

“…Among these parameters, the lattice constant was one of the important parameter used to explain the lattice expansions of the ITO thin films listed in Table I, was determined using the formula employed by Malathy et al 7 Variation in the lattice constant for all the samples was calculated by the ∆a = a − 10.118. 7 The ∆a value was positive for all the samples, which shows a strong confirmation for the lattice expansions in the ITO films.…”

Section: Resultsmentioning

confidence: 99%

“…The observed band gap is in agreement with previous reported values. 7 The variations in the optical band gap were explained by Burstein-Moss shift. 36 Generally in a degenerate semiconductor the optical band gap increases or decreases by varying the carrier concentrations in the ITO films.…”

Section: Resultsmentioning

confidence: 99%

“…ITO is an n-type semiconductor with direct band gap of 3.5-4.3 eV. 7 The electrical, optical, infrared reflectance, hardness and chemical stability material properties of ITO are well characterized. [8][9][10] ITO can be fabricated by DC and RF magnetron sputtering, 1,5 electron beam evaporation, 9 thermal evaporation, 11 spray pyrolysis, 12 chemical solution deposition, 13 and the sol gel method.…”

Section: Introductionmentioning

confidence: 99%

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Effect of ambient combinations of argon, oxygen, and hydrogen on the properties of DC magnetron sputtered indium tin oxide films

et al. 2015

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Sputtering has been well-developed industrially with singular ambient gases including neutral argon (Ar), oxygen (O2), hydrogen (H2) and nitrogen (N2) to enhance the electrical and optical performances of indium tin oxide (ITO) films. Recent preliminary investigation into the use of combined ambient gases such as an Ar+O2+H2 ambient mixture, which was suitable for producing high-quality (low sheet resistance and high optical transmittance) of ITO films. To build on this promising preliminary work and develop deeper insight into the effect of ambient atmospheres on ITO film growth, this study provides a more detailed investigation of the effects of ambient combinations of Ar, O2, H2 on sputtered ITO films. Thin films of ITO were deposited on glass substrates by DC magnetron sputtering using three different ambient combinations: Ar, Ar+O2 and Ar+O2+H2. The structural, electrical and optical properties of the three ambient sputtered ITO films were systematically characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman spectroscopy, four probe electrical conductivity and optical spectroscopy. The XRD and Raman studies confirmed the cubic indium oxide structure, which is polycrystalline at room temperature for all the samples. AFM shows the minimum surface roughness of 2.7 nm for Ar+O2+H2 sputtered thin film material. The thickness of the films was determined by the cross sectional SEM analysis and its thickness was varied from 920 to 817 nm. The columnar growth of ITO films was also discussed here. The electrical and optical measurements of Ar+O2+H2 ambient combinations shows a decreased sheet resistance (5.06 ohm/□) and increased optical transmittance (69%) than other samples. The refractive index and packing density of the films were projected using optical transmission spectrum. From the observed results the Ar+O2+H2 ambient is a good choice to enhance the total optoelectronic properties of the ITO films. The improved electrical and optical properties of ITO films with respect to the Ar+O2+H2 ambient sample were discussed in detail. In addition, the physical properties were also discussed with the influence of this ambient combination with respect to Ar, Ar+O2 and Ar+O2+H2.

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Section: Resultssupporting

confidence: 58%

Section: Resultsmentioning

confidence: 92%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effect of ambient combinations of argon, oxygen, and hydrogen on the properties of DC magnetron sputtered indium tin oxide films

et al. 2015

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Transparent and conductive indium tin oxide/polyimide films prepared by high‐temperature radio‐frequency magnetron sputtering

Wen

Liu

Shen

et al. 2015

J of Applied Polymer Sci

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A highly transparent and thermally stable polyimide (PI) substrate was prepared and used for the fabrication of indium tin oxide (ITO)/PI films via radio-frequency magnetron sputtering at an elevated substrate temperature. The effect of the deposition conditions, that is, the oxygen flow rate, substrate temperature, sputtering power, and working pressure, on the optical and electrical properties of the ITO/PI films were investigated from the microstructural aspects. The results indicate that the optical and electrical properties of ITO were sensitive to the oxygen. Moreover, it was beneficial to the improvement of the ITO conductivity through the adoption of a high substrate temperature and sputtering power and a low working pressure in the deposition process. A two-step deposition method was developed in which a thick bulk ITO layer was overlapped by deposition on a thin seed ITO layer with a dense surface to prepare the highly transparent and conductive ITO/PI films. The ITO/PI film after annealing at 2408C gave a transmittance of 83% and a sheet resistance of 19.7 X/square.

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Effect of annealing time on the structural, optical and electrical characteristics of DC sputtered ITO thin films

Şenol

Öztürk

et al. 2014

J Mater Sci: Mater Electron

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Role of substrate temperature on the structural, optoelectronic and morphological properties of (400) oriented indium tin oxide thin films deposited using RF sputtering technique

Cited by 7 publications

References 36 publications

Effect of ambient combinations of argon, oxygen, and hydrogen on the properties of DC magnetron sputtered indium tin oxide films

Effect of ambient combinations of argon, oxygen, and hydrogen on the properties of DC magnetron sputtered indium tin oxide films

Transparent and conductive indium tin oxide/polyimide films prepared by high‐temperature radio‐frequency magnetron sputtering

Effect of annealing time on the structural, optical and electrical characteristics of DC sputtered ITO thin films

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