2019
DOI: 10.1016/j.apsusc.2019.05.213
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Role of surface defects on the adsorption of poly(9-vinylcarbazole) on TiO2 using the monomer as a donor:acceptor model

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Cited by 7 publications
(5 citation statements)
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“…In order to discuss the electronic structure of the system, we compute the density of electronic states (DOS) for the 3M:TiO 2 system as shown in the upper panel of Figure 5 . The DOS for the 3M:TiO 2 system presents a similarity with the typical DOS observed for the isolated TiO 2 (101) system, characterized by a typical n-type semiconductor behavior with a main contribution of oxygen (O-p states) and titanium (Ti-d states) for the valence and conduction band, respectively [ 55 ].…”
Section: Resultsmentioning
confidence: 71%
“…In order to discuss the electronic structure of the system, we compute the density of electronic states (DOS) for the 3M:TiO 2 system as shown in the upper panel of Figure 5 . The DOS for the 3M:TiO 2 system presents a similarity with the typical DOS observed for the isolated TiO 2 (101) system, characterized by a typical n-type semiconductor behavior with a main contribution of oxygen (O-p states) and titanium (Ti-d states) for the valence and conduction band, respectively [ 55 ].…”
Section: Resultsmentioning
confidence: 71%
“…Hydrogen bond networks play an important role in the adsorption of ornidazole and metronidazole. N3 was also the best site for the adsorption of 1,3‐thiazol‐2‐amine on anatase TiO 2 (001) and (101) surfaces, as detailed by Farrokhpour et al 278 For the adsorption of 9‐vinylcarbazole (VK) 282 on anatase TiO 2 (101) surface, it was found that the O v is beneficial for the adsorption and also yield a lower energy difference between the LUMO level of VK and the CB, which indicates easier injection of electrons from VK toward the TiO 2 ‐O surface.…”
Section: The Adsorption Activation and Reaction Of Organic Moleculesmentioning
confidence: 85%
“… (A) AIMD calculations showing the Li + - ClO 4 − ionic-pair dissociation for an h OI interface based on polyacrylonitrile (PAN) and titanate surface (HTNT) [ Portion of figure adapted/altered minimally with permission from American Chemical Society ] ( Pignanelli et al, 2018a ). (B) DFT calculations showing the electronic charge transfer interactions between vinyl carbazole monomer (PVK) and TiO 2 surface including oxygen vacancies (TiO 2-x ) [ Portion of figure adapted/altered minimally with permission from Elsevier ] ( Mombrú et al, 2019b ). (C) AIMD calculations showing the probability density of Li + spatial occupancy and the elongation feature of probability density along the migration channel with the corresponding isosurfaces for LLZO and LATP [ Portion of figure adapted/altered minimally with permission from Nature Publishing Group ] ( He et al, 2017 ).…”
Section: Mixed Ionic-electronic Transport Of H Oi ...mentioning
confidence: 99%
“…For instance, DFT studies on the electronic interactions of tetrafluoro-tetracyanoquinodimethane (F4-TCNQ)/ZnO surfaces ( Xu et al, 2013 ), hexafluoro-tetracyano-naphthoquinodimethane (F6-TCNNQ)/ZnO surfaces ( Schöttner et al, 2020 ), oligothiophenes and ZnO (and In-doped SnO 2 ) surfaces ( Timpel et al, 2020 ) has shed some light on the work function and other relevant electronic properties of these h OI interfaces. Other DFT studies on the electronic interactions between larger and more complex systems such as polyaniline oligomer/graphene oxide quantum dots (GQD) including edge functionalization ( Mombrú et al, 2017c ) and vinyl carbazole monomer/TiO 2 surfaces including oxygen and titanium vacancy defects ( Mombrú et al, 2019a ; Mombrú et al, 2019b ) has shown interesting features on the electronic properties evidencing the relevance of using more realistic models as depicted in Figure 2B . For instance, the difference between the LUMO level of vinyl carbazole and the conduction band of TiO 2 surface with oxygen vacancies decreases thus favoring the energy barrier associated with the charge injection at this h OI interface ( Mombrú et al, 2019b ).…”
Section: Mixed Ionic-electronic Transport Of H Oi ...mentioning
confidence: 99%
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