Room temperature ammonia sensing performances of pure and Sn doped β-Ga2O3

Pilliadugula, Rekha; Gopalakrishnan, N.

doi:10.1016/j.mssp.2021.106086

Cited by 17 publications

(12 citation statements)

References 45 publications

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“…Then, the solution is placed in an autoclave for reaction under relatively high pressure and moderate temperature conditions. In most cases, gallium nitrate hydrate Ga(NO 3 ) 3 • x H 2 O [ 153 , 154 , 155 , 156 , 157 , 158 , 159 , 160 , 161 , 162 ] was used as the precursor for synthetizing Ga 2 O 3 nanomaterials. The chosen solution has been always distilled water, while other organic solvent such as alcohol [ 156 , 157 ] was also used.…”

Section: Preparation Methods Of Ga 2 O 3...mentioning

confidence: 99%

“…The morphology of these Ga 2 O 3 functional nanomaterials varies from one dimensional to three-dimensional nanostructures such as nanospheres, nanoflowers, nanowires, nanorods, nanobelts, and so on. These sensing materials showed high resistive response towards O 2 [ 109 ], CO [ 109 , 124 , 129 , 135 , 140 , 154 , 155 ], CO 2 [ 158 ], H 2 [ 113 , 132 , 176 ], NH 3 [ 159 , 162 , 177 ], NO 2 [ 125 , 126 , 128 , 141 , 160 , 161 , 176 ], VOCs such as C 2 H 6 O [ 117 , 123 , 141 , 168 ], C 3 H 6 O [ 123 , 133 , 157 ], C 3 H 8 O [ 120 ], and water vapor [ 127 , 130 , 134 ], as reported by many authors. The operating temperature can be low to room temperature due to the large specific surface area and robust properties of nanostructures.…”

Section: Ga 2 O 3 -Based Gas Se...mentioning

confidence: 99%

“…The authors observed that the operating temperature of sensors doped with Zn reduced below 450 °C and Sensors doped with Ce had a very fast response time of typically 40 s. W-doped sensors showed the highest response to O 2 while Sb-doped films possessed the highest base resistance. Sn was proven to be the most effective dopant in Ga 2 O 3 for gas detection at different operating temperatures [ 121 , 122 , 162 , 170 , 189 ]. As examples, Figure 13 exhibits the enhancement of the sensor sensitivity of Sn-doped Ga 2 O 3 gas sensors when detecting different gases.…”

Section: Ga 2 O 3 -Based Gas Se...mentioning

confidence: 99%

“…Doping Sn could enhance the adsorption of NH 3 due to the higher Lewis acidity of Sn 4+ cations than Ga 3+ ones [ 170 ]. Moreover, the introduction of Sn causes a decrease in the average crystallite size and an increase in the specific surface area [ 162 ]. Therefore, Sn-doped Ga 2 O 3 NH 3 sensor showed better performance than the pure Ga 2 O 3 one regardless of the operating temperature.…”

Section: Ga 2 O 3 -Based Gas Se...mentioning

confidence: 99%

Section: Figurementioning

confidence: 99%

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Gallium Oxide for Gas Sensor Applications: A Comprehensive Review

Zhu

et al. 2022

Materials

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Ga2O3 has emerged as a promising ultrawide bandgap semiconductor for numerous device applications owing to its excellent material properties. In this paper, we present a comprehensive review on major advances achieved over the past thirty years in the field of Ga2O3-based gas sensors. We begin with a brief introduction of the polymorphs and basic electric properties of Ga2O3. Next, we provide an overview of the typical preparation methods for the fabrication of Ga2O3-sensing material developed so far. Then, we will concentrate our discussion on the state-of-the-art Ga2O3-based gas sensor devices and put an emphasis on seven sophisticated strategies to improve their gas-sensing performance in terms of material engineering and device optimization. Finally, we give some concluding remarks and put forward some suggestions, including (i) construction of hybrid structures with two-dimensional materials and organic polymers, (ii) combination with density functional theoretical calculations and machine learning, and (iii) development of optical sensors using the characteristic optical spectra for the future development of novel Ga2O3-based gas sensors.

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