Room temperature ferromagnetism in magnetron sputtering prepared Mn-doped ZnO thin films

Abstract

Room temperature ferromagnetism has been observed in Mn-doped ZnO thin films using radio frequency magnetron sputtering. X-ray diffraction measurements show that the samples possess wurtize structures without secondary phases. Magnetization loops for Mn-doped ZnO thin film which deposited at 300 °C and annealed in O 2 atmosphere at 500 °C were measured at 300 K and show ferromagnetic behaviour. In our study, the result shows that it is the substitutional Mn 2+ ions that make the ferromagnetic ordering in Mn doped ZnO thin films. Ferromagentic ordering becomes weaker at higher concentration of oxygen vacancy.

Temperature-dependent stoichiometric alteration in ZnO:Mn nanostructured thin films for enhanced ferromagnetic response

“…The relative concentration of structural defects in Mn doped ZnO (ZnO:Mn), estimated through deep level emissions (DLE) in room temperature photoluminescence (PL) spectra, influence the exchange coupling of Mn in ZnO host matrix [8] making the origin of ferromagnetism controversial. The control and stability of structural defects in thin films of ZnO:Mn, to achieve room temperature ferromagnetism (RTFM) [9] through indirect ferromagnetic p-d exchange coupling, are a pre-requisite for spintronics device applications. Therefore, an investigation about the effects of deposition parameters on the stoichiometry of ZnO:Mn thin films is of strong fundamental and practical interest.…”