Room-temperature processed tin oxide thin film as effective hole blocking layer for planar perovskite solar cells

SnO2-based electron transporting layer materials for perovskite solar cells: A review of recent progress

“…Tao et al studied the influence of sputtering time (thickness) of SnO 2 films on PSC performance [105] . In their research, roomtemperature compact SnO 2 films were fabricated by RF sputtering with different sputtering times (0 min, 20 min, 30 min, 40 min, marked as FTO, RFMS-20 (12.6 nm), RFMS-30 (18.9 nm), RFMS-40 (25.2 nm), respectively).…”

Scalable Fabrication of Stable High Efficiency Perovskite Solar Cells and Modules Utilizing Room Temperature Sputtered SnO2 Electron Transport Layer

“…Without removing the TiO 2 layer in the interconnection can significantly increase series resistance and lower PSM performance . In contrast with TiO 2 , SnO 2 could be easily coated by low temperature solution process,[10a,17] electrodeposition process, atomic layer deposition, chemical bath deposition, electron‐beam deposition, and sputtering deposition . However, most of the reported results based on SnO 2 ETL are small area devices and large area PSMs are rare .…”

Reactive-Sputtered Prepared Tin Oxide Thin Film as an Electron Transport Layer for Planar Perovskite Solar Cells

“…The dense TiO 2 acts to transport electron blocking holes, and the function of the porous TiO 2 is to improve the uniformity of the spin-coated perovskite film. However, since the preparation of titanium dioxide needs to undergo a high temperature process, has weak optical stability and low mobility, leading to higher production costs and longer energy recovery times [5], its development is greatly limited [6]. On this basis, the fabrication of planar PSCs and electron transport layers has attracted extensive research [7].…”

“…The initial studies of SnO 2 in PSCs were almost concurrently carried out in many research teams, such as Dai and co-workers and the Guojia Fang teams [13], who reported an efficiency of~3.9% and over 20% [14], respectively. After that, SnO 2 ETLs attracted more and more attention and made rapid progress [6]. At present, the device with SnO 2 as the ETLs has reached 21.52% efficiency [15], although there is still great potential for further increasing that efficiency [16].…”

“…Moreover, the low deposition rate, being time consuming and high cost of making tin oxide electron transport layer by ALD technology also limit its application for industrialization [21]. On the contrary, radio frequency magnetron sputtering (RS) is a mature technology for low cost industrialization of semiconductor materials [6,22]. RS has played an important role in making electron transport and hole barrier layers in PSCs [23], including improving device performance [24], lowering temperature and reducing costs [25], as well as providing a basis for large-scale and industrialized solar cells that cannot be replaced by other methods [26].…”