Room temperature spin-orbit torque efficiency and magnetization switching in 
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-based heterostructures

Sheng, L.; Lao, Bin; Lu, Zengxing; Xuan, Zheng; Zhao, Kenan; Gong, Liguang; Tang, Tao; Keyi, Wu,; Li, Run-Wei; Wang, Zhiming

doi:10.1103/physrevmaterials.7.024418

Cited by 4 publications

(1 citation statement)

References 53 publications

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“…5 ). We estimate a switching current density in SrRuO 3 about (3.05 ± 0.04) × 10 6 A/cm 2 by a parallel resistance model (see Supplementary Note 5 ), which is comparable to that of the heavy metal/ferromagnetic metal system 49 and SrRuO 3 -based heterostructures 50 , 51 . The linear dependence 52 of the threshold switching current on H x plotted in Fig.…”

Section: Resultsmentioning

confidence: 57%

Voltage control of multiferroic magnon torque for reconfigurable logic-in-memory

Chai,

Liang,

Xiao

et al. 2024

Nat Commun

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Magnons, bosonic quasiparticles carrying angular momentum, can flow through insulators for information transmission with minimal power dissipation. However, it remains challenging to develop a magnon-based logic due to the lack of efficient electrical manipulation of magnon transport. Here we show the electric excitation and control of multiferroic magnon modes in a spin-source/multiferroic/ferromagnet structure. We demonstrate that the ferroelectric polarization can electrically modulate the magnon-mediated spin-orbit torque by controlling the non-collinear antiferromagnetic structure in multiferroic bismuth ferrite thin films with coupled antiferromagnetic and ferroelectric orders. In this multiferroic magnon torque device, magnon information is encoded to ferromagnetic bits by the magnon-mediated spin torque. By manipulating the two coupled non-volatile state variables—ferroelectric polarization and magnetization—we further present reconfigurable logic operations in a single device. Our findings highlight the potential of multiferroics for controlling magnon information transport and offer a pathway towards room-temperature voltage-controlled, low-power, scalable magnonics for in-memory computing.

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Section: Resultsmentioning

confidence: 57%

Voltage control of multiferroic magnon torque for reconfigurable logic-in-memory

Chai,

Liang,

Xiao

et al. 2024

Nat Commun

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show abstract

Recent progress on controlling spin-orbit torques by materials design

Ji,

Zhang,

Chai

et al. 2024

npj Spintronics

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Research progress of novel quantum states and charge-spin interconversion in transition metal oxides

Lao¹,

Xuan²,

Sheng³

et al. 2023

Acta Phys. Sin.

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For satisfying the efficient storage and processing of massive data in the information technology era, spintronic device attracts tremendous attention due to its low power consumption and non-volatile feature. Spin source material, which can efficiently generates spin current, is an important constituent of novel spin-orbit torque device. The efficiency of spin current generation in spin source materials directly determines the performance of various spintronic devices. In the nearly two decades, great progress has been achieved in exploring high-efficient spin source material systems, as well as understanding the relevant physical mechanisms. A wide variety of materials are explored ranging from the traditional heavy metal and semiconductors to topological insulators and 2D materials. Recently, the material family of transition metal oxides attracts tremendous attention due to its efficient and highly tunable charge-spin conversion intimately related to its emerging novel quantum states and electronic structure. The mechanism of charge-spin conversion generally have two contributions from the bulk spin Hall effect and the spin-momentum locked interface with inversion symmetry breaking. Novel electronic structure such as the topological band structure and spin-momentum locked surface states can realize efficient charge-spin conversion. For example, the Weyl points in SrRuO3 and the topological Dirac nodal line in SrIrO3 are predicted to give rise to large Berry curvature and the corresponding spin Hall conductance; the topological surface states can generate spin accumulation due to spin-momentum locking; the Rashba states at the oxide interface such as the 2D electron gas in SrTiO3 and KTaO3 can generate spin current by Rashba-Edelstein effect. Furthermore, the entanglement of various degrees of freedom, including spin, charge, lattice and orbit in transition metal oxides lead to the electronic structure highly tunable by various methods including gate voltage, substrate constraint, thickness, interface engineering etc. Therefore, the charge-spin conversion in transition metal oxides is of great interest for both fundamental research in modulation of novel electronic structure and exploring its promising potential in future spintronic devices. In this review, we focus on introducing the aspects of exotic electronic structures, spin transport mechanism, charge-spin interconversion characterization, efficiency and manipulation in TMOs, and giving a perspective about the future development trend.

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Room temperature spin-orbit torque efficiency and magnetization switching in SrRuO3 -based heterostructures

Cited by 4 publications

References 53 publications

Voltage control of multiferroic magnon torque for reconfigurable logic-in-memory

Voltage control of multiferroic magnon torque for reconfigurable logic-in-memory

Recent progress on controlling spin-orbit torques by materials design

Research progress of novel quantum states and charge-spin interconversion in transition metal oxides

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