Saturation of photoresponse to intense THz radiation in AlGaN/GaN HEMT detector

Dyakonova, N.; Faltermeier, Philipp; But, Dmytro B.; Coquillat, Dominique; Ganichev, Sergey; Knap, W.; Nowakowski-Szkudlarek, Krzesimir; Cywiński, G.

doi:10.1063/1.4966575

Cited by 17 publications

(8 citation statements)

References 27 publications

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“…Recent experiments [ 6 , 35 ] have demonstrated that different FETs, such as Si MOSFETs (metal-oxide-semiconductor field-effect transistor) and AlGaN/GaN HEMTs (high-electron-mobility transistor) at the sub-threshold gate bias, when illuminated by a short-pulse of THz radiation, also exhibit a super-linear response slope before reaching saturation. In this regime, the voltage signal of the transistor is proportional to the radiation power as

, where the index n is greater than 1.…”

Section: Si Cmos Fet Detectormentioning

confidence: 99%

Silicon Field Effect Transistor as the Nonlinear Detector for Terahertz Autocorellators

Ikamas

Nevinskas

Krotkus

et al. 2018

Sensors

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We demonstrate that the rectifying field effect transistor, biased to the subthreshold regime, in a large signal regime exhibits a super-linear response to the incident terahertz (THz) power. This phenomenon can be exploited in a variety of experiments which exploit a nonlinear response, such as nonlinear autocorrelation measurements, for direct assessment of intrinsic response time using a pump-probe configuration or for indirect calibration of the oscillating voltage amplitude, which is delivered to the device. For these purposes, we employ a broadband bow-tie antenna coupled Si CMOS field-effect-transistor-based THz detector (TeraFET) in a nonlinear autocorrelation experiment performed with picoseconds-scale pulsed THz radiation. We have found that, in a wide range of gate bias (above the threshold voltage Vth=445 mV), the detected signal follows linearly to the emitted THz power. For gate bias below the threshold voltage (at 350 mV and below), the detected signal increases in a super-linear manner. A combination of these response regimes allows for performing nonlinear autocorrelation measurements with a single device and avoiding cryogenic cooling.

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, where the index n is greater than 1.…”

Section: Si Cmos Fet Detectormentioning

confidence: 99%

Silicon Field Effect Transistor as the Nonlinear Detector for Terahertz Autocorellators

Ikamas

Nevinskas

Krotkus

et al. 2018

Sensors

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“…At large intensities of the incident THz radiation, the response has been observed to saturate in the measurements [14]. Different propositions have been made to explain this effect [15], [16], [17]. In this work we explore the reason for the response saturation effect by examining different physical mechanisms in the physics-based simulations using the validated TCAD models [18].…”

Section: Introductionmentioning

confidence: 99%

TCAD Model for TeraFET Detectors Operating in a Large Dynamic Range

Liu

Shur

2020

IEEE Trans. THz Sci. Technol.

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We present technology computer-aided design (TCAD) models for AlGaAs/InGaAs and AlGaN/GaN and silicon TeraFETs, plasmonic field effect transistors (FETs), for terahertz (THz) detection validated over a wide dynamic range. The modeling results are in good agreement with the experimental data for the AlGaAs/InGaAs heterostructure FETs (HFETs) and, to the low end of the dynamic range, with the analytical theory of the TeraFET detectors. The models incorporate the response saturation effect at high intensities of the THz radiation observed in experiments and reveal the physics of the response saturation associated with different mechanisms for different material systems. These mechanisms include the gate leakage, the velocity saturation and the avalanche effect.

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“…Recently, observations of high-order-sideband generation in QWs resulting from electron-hole recollisions have been reported 26 , which suggest a new mechanism for the ultrafast modulation of light. It is also worth to mention the photoresponse of AlGaN/GaN high electron mobility transistors to the THz radiation of low and high ( ) intensities 27 and the observation of a THz radiation-induced photon drag effect in n and p-type three-dimensional topological insulators 28 .…”

Section: Introductionmentioning

confidence: 99%

Molecular spectrum of laterally coupled quantum rings under intense terahertz radiation

Baghramyan

Barseghyan

Laroze

2017

Sci Rep

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We study the influence of intense THz laser radiation and electric field on molecular states of laterally coupled quantum rings. Laser radiation shows the capability to dissociate quantum ring molecule and add 2-fold degeneracy to the molecular states at the fixed value of the overlapping size between rings. It is shown that coupled to decoupled molecular states phase transition points form almost a straight line with a slope equal to two. In addition, the electric field direction dependent energy spectrum shows unexpected oscillations, demonstrating strong coupling between molecular states. Besides, intraband absorption is considered, showing both blue and redshifts in its spectrum. The obtained results can be useful for the controlling of degeneracy of the discrete energy spectrum of nanoscale structures and in the tunneling effects therein.

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Saturation of photoresponse to intense THz radiation in AlGaN/GaN HEMT detector

Cited by 17 publications

References 27 publications

Silicon Field Effect Transistor as the Nonlinear Detector for Terahertz Autocorellators

Silicon Field Effect Transistor as the Nonlinear Detector for Terahertz Autocorellators

TCAD Model for TeraFET Detectors Operating in a Large Dynamic Range

Molecular spectrum of laterally coupled quantum rings under intense terahertz radiation

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