SbSeI and SbSeBr micro-columnar solar cells by a novel high pressure-based synthesis process

Ivan, Caño Prades,; Navarro, A. Bañón; Maggi, Edoardo; Tamarit, J. Ll.; Svatek, Simon A.; Antolín, E.; Yan, Shunya; Barrena, Esther; Galiana, B.; Placidi, Marcel; Puigdollers, J.; Saucedo, Edgardo

doi:10.1039/d3ta03179a

Cited by 4 publications

(2 citation statements)

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“…The 2D group VA materials (such as phosphene and antimonene) possess small carrier effective mass and high carrier mobility because they are mainly governed by p orbitals. , However, black phosphorus suffers from ambient instability, which would lead to the degradation of device performance. , Studies have shown that 2D Sb-based materials have good stability while maintaining excellent electronic properties. , SbSeBr is a promising Sb-based chalcogenide, whose layered single crystal has been successfully synthesized and applied to the photovoltaic field . Moreover, the strong electronegativity of Se and Br atoms in SbSeBr contributes to its great stability .…”

Section: Methodsmentioning

confidence: 99%

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High-Performance Sub-10 nm Two-Dimensional SbSeBr Transistors through Transport Orientation

Yang,

Shi,

et al. 2024

J. Phys. Chem. Lett.

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Exploring two-dimensional (2D) materials with a small carrier effective mass and suitable band gap is crucial for the design of metal oxide semiconductor field effect transistors (MOSFETs). Here, the quantum transport properties of stable 2D SbSeBr are simulated on the basis of first-principles calculations. Monolayer SbSeBr proves to be a competitive channel material, offering a suitable band gap of 1.18 eV and a small electron effective mass (m e*) of 0.22m 0. The 2D SbSeBr field effect transistor (FET) with 8 nm channel length exhibits a high on-state current of 1869 μA/μm, low power consumption of 0.080 fJ/μm, and small delay time of 0.062 ps, which can satisfy the requirements of the International Technology Roadmap for Semiconductors for high-performance devices. Moreover, despite the monolayer SbSeBr having an isotropic m e*, the asymmetrical band trends enable SbSeBr FETs to display transport orientation, which emphasizes the importance of band trends and provides valuable insights for selecting channel materials.

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Section: Methodsmentioning

confidence: 99%

“…Moreover, the strong electronegativity of Se and Br atoms in SbSeBr contributes to its great stability . However, the existing studies on 2D SbSeBr predominantly focus on photoelectric, ferroelectric, thermoelectric, and piezoelectric properties, − and its application in transistors remains to be studied.…”

Section: Methodsmentioning

confidence: 99%

High-Performance Sub-10 nm Two-Dimensional SbSeBr Transistors through Transport Orientation

Yang,

Shi,

et al. 2024

J. Phys. Chem. Lett.

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Machine‐Learning Aided First‐Principles Prediction of Earth‐Abundant Pnictogen Chalcohalide Solid Solutions for Solar‐Cell Devices

López,

Caño,

Rovira

et al. 2024

Adv Funct Materials

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Discovering novel families of materials composed of earth‐abundant elements and characterized by non‐toxicity, high thermodynamic stability, and simple low‐temperature synthesis processes, is paramount for the advancement of urgently needed energy storage and conversion technologies. Pnictogen chalcohalides, represented by the general formula ABC (A = Bi, Sb; B = S, Se; C = I, Br), emerge as a promising class of energy materials particularly well‐suited for photovoltaic applications. However, the compositional landscape of BixSb1 − xSySe1 − yIzBr1 − z is vast and remains largely unexplored, with traditional experimental and theoretical exploration techniques facing limitations in covering the entire solid‐solution range due to their labor‐intensive and time‐consuming nature. Here, an integrated bottom‐up approach that combines first‐principles calculations, machine learning models, experiments, and device optimizations is introduced to provide a comprehensive fundamental understanding of pnictogen chalcohalides with arbitrary composition and to expedite the design of high‐performance multi‐junction solar cells. The synergistic investigations unveil a broad and continuous spectrum of bandgaps and optical absorption coefficients ranging from 1.2 to 2.1 eV and from 2.5 · 105 to 6.6 · 105 cm−1, respectively, across a wide variety of thermodynamically stable compounds. Additionally, a tandem BiSBr–BiSeI device is identified as an optimal multi‐junction solar cell, exhibiting a maximum short‐circuit current density of 18.65 mA cm−2 under intensity‐matching conditions. The introduced bottom‐up materials design approach may facilitate an unprecedented and rapid translation of basic knowledge into the most demanded solar cell applications.

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Preparation and characterization of SbSeI thin films

Dolcet Sadurni,

Timmo,

Mikli

et al. 2024

Journal of Science: Advanced Materials and Devices

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SbSeI and SbSeBr micro-columnar solar cells by a novel high pressure-based synthesis process

Abstract: Van der Waals chalcogenides and chalcohalides have the potential to become the next thin film PV breakthrough, owing to the earth-abundancy and non-toxicity of their components, stability, high absorption coefficient...

Cited by 4 publications

References 41 publications

High-Performance Sub-10 nm Two-Dimensional SbSeBr Transistors through Transport Orientation

High-Performance Sub-10 nm Two-Dimensional SbSeBr Transistors through Transport Orientation

Machine‐Learning Aided First‐Principles Prediction of Earth‐Abundant Pnictogen Chalcohalide Solid Solutions for Solar‐Cell Devices

Preparation and characterization of SbSeI thin films

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