Scanning tunneling microscopy study of Au growth on Ge(001): Bulk migration, self-organization, and clustering

Wang, J.; Li, M.; Altman, Eric I.

doi:10.1016/j.susc.2005.09.009

Cited by 51 publications

(69 citation statements)

References 44 publications

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“…On the basis of STM and scanning tunnelling spectroscopy (STS) measurements, we found that the resulting structures are in both cases electronically and structurally identical. In agreement with both Wang et al [21,22] and Schäfer et al [23] the Au-induced nanowires are 1.6 nm separated apart. However, the height of these structures turns out to be at least 5 Å, i.e., several atomic layers, rather than the one layer (1.5 Å) reported by Schäfer et al [23] and Wang et al [21] Furthermore, in agreement with Wang et al we found that the Au-induced nanowires are two atoms wide, rather than one atom.…”

Section: Introductionsupporting

confidence: 89%

“…In order to electronically decouple the electrons near the Fermi level from the underlying substrate often a material with a band gap is chosen [17][18][19]. Examples that fall in this category are Pt and Au-induced one-dimensional structures on Ge(001) surfaces [20][21][22][23][24]. Wang and co-workers [21,22] reported the formation of a zigzag Au dimer row upon deposition of Au on Ge(001).…”

Section: Introductionmentioning

confidence: 99%

“…Examples that fall in this category are Pt and Au-induced one-dimensional structures on Ge(001) surfaces [20][21][22][23][24]. Wang and co-workers [21,22] reported the formation of a zigzag Au dimer row upon deposition of Au on Ge(001). Recently, Schäfer and co-workers [23] reported that the deposition of Au on Ge(001) leads to the formation of Au chains with a diameter of only a single atom, which represent an outstandingly close approach to a one-dimensional electron liquid.…”

Section: Introductionmentioning

confidence: 99%

“…These authors report a change of the tunneling conductivity by two orders of magnitude when comparing the ridges of the self-organized nanowires with the troughs in between the nanowires. Their preparation method is, however, somewhat different from the one used by Wang et al [21,22] and van Houselt et al [24] Since there is some controversy regarding the exact structural and electronic properties of the Au-induced nanowires prepared by the different research groups we have revisited this system by comparing the Au-induced nanowires that have been prepared by the different preparation procedures. In this Chapter, we compare two preparation procedures, namely (1) deposition of Au at 775 K and (2) deposition of Au at room temperature followed by an anneal at 650 K. The first method is applied by Schäfer et al, [23] whereas Wang et al [21,22] and van Houselt et al [24] used the second method.…”

Section: Introductionmentioning

confidence: 99%

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Properties of 1D metal-induced structures on semiconductor surfaces

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Section: Introductionsupporting

confidence: 89%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Properties of 1D metal-induced structures on semiconductor surfaces

Mocking

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“…On these terraces, no NWs are found, indicating all the Au moved into the subsurface. 86,95,96,156,157 The observed dimer vacancies (DV) did not show any long range order, as is seen for Ni-and Ag-induced vacancy lines on Si(001). [158][159][160][161] However, they do form short-range DV complexes: (1+2+1) DVs along the dimer rows of the reconstructed Ge surface.…”

Section: Au Nanowires On Ge(001) a Experimental Backgroundmentioning

confidence: 68%

Modeling 1D structures on semiconductor surfaces: synergy of theory and experiment

Vanpoucke

2014

J. Phys.: Condens. Matter

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Atomic scale nanowires attract enormous interest in a wide range of fields. On the one hand, due to their quasi-one-dimensional nature, they can act as a experimental testbed for exotic physics: Peierls instability, charge density waves, and Luttinger liquid behavior. On the other hand, due to their small size, they are of interest for future device applications in the micro-electronics industry, but also for applications regarding molecular electronics. This versatile nature makes them interesting systems to produce and study, but their size and growth conditions push both experimental production and theoretical modeling to their limits. In this review, modeling of atomic scale nanowires on semiconductor surfaces is discussed focusing on the interplay between theory and experiment. The current state of modeling efforts on Pt-and Au-induced nanowires on Ge (001) is presented, indicating their similarities and differences. Recently discovered nanowire systems (Ir, Co, Sr) on the Ge(001) surface are also touched upon. The importance of scanning tunneling microscopy as a tool for direct comparison of theoretical and experimental data is shown, as is the power of density functional theory as an atomistic simulation approach. It becomes clear that complementary strengths of theoretical and experimental investigations are required for successful modeling of the atomistic nanowires, due to their complexity.

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Computational Materials Science: Where Theory Meets Experiments

Vanpoucke

2015

Developments in Strategic Ceramic Materials

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In contemporary materials research, we are able to create and manipulate materials at ever smaller scales: the growth of wires with nanoscale dimensions and the deposition of layers with a thickness of only a few atoms are just two examples that have become common practice. At this small scale, quantum mechanical effects become important, and this is where computational materials research comes into play. Using clever approximations, it is possible to simulate systems with a scale relevant for experiments. The resulting theoretical models provide fundamental insights in the underlying physics and chemistry, essential for advancing modern materials research. As a result, the use of computational experiments is rapidly becoming an important tool in materials research both for predictive modeling of new materials and for gaining fundamental insights in the behavior of existing materials. Computer and lab experiments have complementary limitations and strengths; only by combining them can the deepest fundamental secrets of a material be revealed.In this paper, we discuss the application of computational materials science for nanowires on semiconductor surfaces, ceramic materials and flexible metal-organic frameworks, and how direct comparison can advance insight in the structure and properties of these materials.

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Scanning tunneling microscopy study of Au growth on Ge(001): Bulk migration, self-organization, and clustering

Cited by 51 publications

References 44 publications

Properties of 1D metal-induced structures on semiconductor surfaces

Properties of 1D metal-induced structures on semiconductor surfaces

Modeling 1D structures on semiconductor surfaces: synergy of theory and experiment

Computational Materials Science: Where Theory Meets Experiments

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