Scattering-assisted electric current in semiconductor superlattices in the Wannier-Stark regime

Tarakanov, YA; Vettchinkina, Valeria; Odnoblyudov, M. A.; Chao, K. A.; Sekine, Norihiko; Hirakawa, Kazuhiko

doi:10.1103/physrevb.72.125345

Cited by 10 publications

(7 citation statements)

References 25 publications

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“…f n i ͑k i ͒ and ␥͑k i ͒ are derived with the Monte Carlo simulation procedure which is described in Ref. 20. The so calculated gain spectrum G͑ប͒ for an applied electric field F = 17 V / cm is plotted in Fig.…”

Section: Numerical Resultsmentioning

confidence: 99%

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Scattering-assisted terahertz gain in semiconductor superlattices in the Wannier-Stark-Ladder regime

et al. 2006

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Using the second-order perturbation theory we have calculated the scattering assisted gain spectra in GaAs/ AlGaAs superlattice under a strong applied electric field in the Wannier-Stark-Ladder ͑WSL͒ regime. Nonequilibrium distribution function of quasi-two-dimensional carriers localized in each WSL level and indirect optical transitions between neighboring WSL levels accompanied by the emission or absorption of acoustical phonons are taken into account in our theoretical analysis and numerical calculation. We have shown that the experimentally observed down shift of the zero-gain frequency from the Bloch oscillation frequency is due to the inelastic nature of the phonon scattering and the formation of excitons when electron-hole pairs are photoexcited. Our theoretical results agree well with the experimental data which were obtained from analyzing the THz response of superlattices to the picosecond optical pulse excitation.

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Section: Numerical Resultsmentioning

confidence: 99%

“…While optical phonons play an important role in the understanding of the observed fine structures in the currentvoltage curves, 20 here the relevant scattering assisted processes involve mainly acoustical phonons. Let H e-r and H e-ph be, respectively, the electron-photon and the electron-phonon interaction Hamiltonians.…”

Section: Dispersive Terahertz Gainmentioning

confidence: 99%

Scattering-assisted terahertz gain in semiconductor superlattices in the Wannier-Stark-Ladder regime

et al. 2006

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“…Indeed, previous investigations indicate that the transport properties in similar systems are well described when the phonon spectrum is assumed to be bulklike. 18,[24][25][26] The optical phonon mode is assumed to be dispersionless, and the acoustic branch has a linear dispersion relation q ac = uq, with u the sound velocity in GaAs. The full inelastic forms of acoustic e-p interactions are kept.…”

Section: ј͒mentioning

confidence: 99%

Transport properties of a bilayer two-dimensional electron gas under an in-plane magnetic field: Monte Carlo simulations

Guo

Cao

2007

Phys. Rev. B

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Using an ensemble Monte Carlo method, we have theoretically investigated the transport properties of a GaAs/ ͑Al, Ga͒As double quantum well bilayer two-dimensional electron gas under an in-plane magnetic field. Intrasubband and intersubband electron-phonon interactions through polar optical and acoustic phonons are included in the simulation. The effects of the magnetic-field-induced distortions of energy dispersion on the scattering rate are fully taken into account. Our results show that the emergence of magnetic-field-induced negative effective mass does not affect appreciably the electron drift velocity ͑v d ͒ as a function of electric field ͑E͒, and no dv d / dE Ͻ 0 region appears on the v d -E curve. The oscillation of v d with magnetic fields is found, which is qualitatively in accordance with experimental results.

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“…From the simulative side, recent Monte Carlo investigations [10,11] have analyzed the drift velocity [10] and both the drift velocity and diffusion [11] but neglecting the coupling between the field and the energy levels. Furthermore, in Ref.…”

Section: Introductionmentioning

confidence: 99%

High-field transport in semiconductor superlattices for interacting Wannier–Stark levels

Guida

Reggiani

Rosini

2008

Superlattices and Microstructures

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We develop a microscopic theory of electron transport in superlattices within the Wannier-Stark approach by including the interaction associated with Zener tuneling among the energy levels pertaining to adjacent quantum wells. By using a Monte Carlo technique we have simulated the hopping motion associated with absorption and emission of polar optical phonons and determined the main transport parameters for the case of a GaAs/GaAlAs structure at room temperature. The interaction among the levels is found to be responsible for a systematic increase of the level energy with respect to the bottom of the quantum well at electric fields above about 20 kV/cm. When compared with the non-interacting case, at the highest fields the average carrier energy evidences a consistent increase which leads to a significant softening of the negative differential value of both the drift velocity and diffusivity.

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Scattering-assisted electric current in semiconductor superlattices in the Wannier-Stark regime

Cited by 10 publications

References 25 publications

Scattering-assisted terahertz gain in semiconductor superlattices in the Wannier-Stark-Ladder regime

Scattering-assisted terahertz gain in semiconductor superlattices in the Wannier-Stark-Ladder regime

Transport properties of a bilayer two-dimensional electron gas under an in-plane magnetic field: Monte Carlo simulations

High-field transport in semiconductor superlattices for interacting Wannier–Stark levels

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