Scattering by ionization and phonon emission in semiconductors

Alig, R. Casanova; Bloom, S.; Struck, C. W.

doi:10.1103/physrevb.22.5565

Cited by 318 publications

(189 citation statements)

References 56 publications

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“…This value agrees with the theoretical predictions on cascades initiated by electrons, which suggests pair-creation values between 10.3 and 11.6 eV. 55,56 However, the value obtained lies somewhat below experimental results. [52][53][54] The observations just presented indicate that the values of mean free paths in diamond obtained with different models are inconsistent.…”

Section: Mean Free Path Fittedsupporting

confidence: 76%

Ionization by impact electrons in solids: Electron mean free path fitted over a wide energy range

Ziaja

London

Hajdu

2006

Journal of Applied Physics

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We propose a simple formula for fitting the electron ionization mean free paths in solids both at high and at low electron energies. The free-electron-gas approximation used for predicting electron mean free paths is no longer valid at low impact energies ͓͑E − E F ͒ Ͻ 50 eV͔, as the band structure effects become significant at those energies. Therefore, we include the results of band structure calculations in our fit. Finally, we apply the fit to nine elements and two compounds.

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Section: Mean Free Path Fittedsupporting

confidence: 76%

Ionization by impact electrons in solids: Electron mean free path fitted over a wide energy range

Ziaja

London

Hajdu

2006

Journal of Applied Physics

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“…For SiO 2 , electron-hole recombination is not a process of primary importance [54]. Therefore, we can expect good coincidence between the experimental long-time value [36] and our calculation. For the two other materials shown in table 1, we can only compare our results for the pure EEG with the upper limit of the PCE for longer times [36].…”

Section: Effective Energy Gapsupporting

confidence: 62%

“…Therefore, we can expect good coincidence between the experimental long-time value [36] and our calculation. For the two other materials shown in table 1, we can only compare our results for the pure EEG with the upper limit of the PCE for longer times [36]. New experiments with femtosecond lasers (FLASH) are needed to confirm our predictions.…”

Section: Effective Energy Gapmentioning

confidence: 81%

Transient dynamics of the electronic subsystem of semiconductors irradiated with an ultrashort vacuum ultraviolet laser pulse

Medvedev¹,

Rethfeld²

2010

New J. Phys.

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Abstract. The irradiation of semiconductors with ultrashort laser pulses causes excitation of electrons from bound states (the valence band and deep atomic shells) to the conduction band, which produces non-equilibrium highly energetic free electrons. We apply a Monte-Carlo simulation technique to study the ionization and excitation of the electronic subsystem of a solid silicon target irradiated with a femtosecond laser pulse, obtaining the transient distribution of electrons within the conduction band. We take into account the electronic band structure and Pauli's principle for excited electrons. Secondary excitation and ionization processes induced by electrons in the conduction band and holes in the valence band were also included and simulated event by event. The temporal distributions of the density and the energy of excited electrons are calculated and discussed. We demonstrate that, due to the energy used to overcome the ionization potential, the final kinetic energy of the free electrons is significantly less than the total energy provided by the laser pulse. We extend the concept of an 'effective energy gap' for multiple electronic excitations, which can be applied to estimate the free-electron density after high-intensity vacuum ultraviolet (VUV) laser pulse irradiation. The effective energy gap depends on both the properties of the material and the laser pulse parameters. The concept provides a fundamental understanding of the experimentally accessible pair creation energy measured in the limit of long times.

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“…26,27 If a reasonably accurate estimate for the band gap is available, Eq. ͑3͒ is expected to give the pair formation energy within 20% accuracy.…”

Section: B Generation Of Charge Carriersmentioning

confidence: 99%

“…The energy deposited in the sample per unit volume can be obtained from the measured irradiation dose ͑D irr in Gray, 1 Gy= 1 J / kg͒ which was determined using thin film radiochromic dosimetry. The pair formation energy of the polymer backbone can be approximated by the empirical relation derived by Alig 26 that relates the pair formation energy ͑in eV͒ in ͑inorganic͒ semiconductors to their band gap ͑E g in eV͒…”

Section: B Generation Of Charge Carriersmentioning

confidence: 99%

Effect of intermolecular disorder on the intrachain charge transport in ladder-type poly(p-phenylenes)

et al. 2006

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We have studied the real and imaginary parts of the complex intrachain mobility of charge carriers on solid samples of ladder-type polymers using time-resolved microwave conductivity measurements. Experiments on samples with a different average polymer chain length show that the motion of charge carriers is limited by the chain ends. The experimental results can be described by one-dimensional diffusive motion along the polymer backbone. The intrachain mobility deduced for an infinitely long ladder-type polymer chain ͑with no barriers to charge transport such as defects or conjugation breaks͒ subject to interchain interactions is 30 cm 2 / V s. This value is 20 times lower than the intrachain mobility found for charges along infinitely long isolated ladder-type polymer chains in dilute solution. Thus we find that interchain interactions in solid samples severely decrease the intrachain charge carrier mobility. However, the intrachain mobility of 30 cm 2 / V s is more than four orders of magnitude higher than mobility values obtained from time of flight measurements reported in the literature. Hence, the performance of ladder-type polymers in optoelectronic devices can be significantly improved.

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Scattering by ionization and phonon emission in semiconductors

Cited by 318 publications

References 56 publications

Ionization by impact electrons in solids: Electron mean free path fitted over a wide energy range

Ionization by impact electrons in solids: Electron mean free path fitted over a wide energy range

Transient dynamics of the electronic subsystem of semiconductors irradiated with an ultrashort vacuum ultraviolet laser pulse

Effect of intermolecular disorder on the intrachain charge transport in ladder-type poly(p-phenylenes)

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