2012 15th International Workshop on Computational Electronics 2012
DOI: 10.1109/iwce.2012.6242834
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Scattering in GaAs for Fermi kinetics transport

Abstract: Progress on a Fermi kinetics hot electron transport model, a numerically efficient approach based on ideal Fermi gas thermodynamics, is reported. The basics of the model are first reviewed, and then methods for incorporating ionized impurity, acoustic phonon, and long range electron-electron scattering are described. The different roles the various scattering mechanisms serve within the model and their effects on simulation results are also presented.

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