Journal of Vacuum Science &Amp; Technology B: Microelectronics Processing and Phenomena
 1983
DOI: 10.1116/1.582608
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Schottky barrier formation and the initial metal–atom bonding state: InP(110)–Al vs GaAs(110)–Al

Te‐Xiu Zhao1,
R. R. Daniels2,
A. D. Katnani3
et al.

Abstract: Articles you may be interested inCorrelation between currentvoltage and capacitancevoltage Schottky barrier height on (100) and (110) GaAs and (110) InP surfaces

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