Schottky Biristor: A Metal-Semiconductor–Metal Bistable Resistor

Abstract

In this brief, we report a novel metalsemiconductor-metal-based bistable resistor, called the Schottky biristor, whose performance is superior to the existing bipolar junction transistor-based biristors. The proposed device can be realized by joining symmetrical Schottky contacts back to back. Apart from being free of the thermal budgets involved in the fabrication of p-n junctions in a biristor, the Schottky biristor also has much lower latch voltages (latch-up voltage of 1.62 V and latch-down voltage of 1.18 V) and a reasonable latch window (0.44 V) as demonstrated by our simulation results.

Si 1− x Ge x nanowire based metal‐semiconductor‐metal Schottky biristor: Design and sensitivity analysis

“…However, the pining effect can be eliminated by using interfacial engineering of the metal‐semiconductor junction. The simulation framework used for this investigation has been calibrated against [10] and I C ‐ V CE characteristics as shown in Figure 3. For validating the model all the dimensional and doping parameters are kept same as the parameters of [10].…”

“…Recently Kumar et al. reported metal‐semiconductor‐metal (MSM) junction based Schottky biristor that exhibits the inherent easy fabrication process, low latch voltages and higher latching windows than the earlier literature [10] and various other biristor structures as well are also reported [6–8].…”

“…This feature of biristor can be used for storing purpose. Another advantage of adopting this structure is its potential applications in photodiodes due to higher switching speed, CMOS process compatibility and higher bandwidth [9][10][11][12][13]. At present silicon fabrication process enabled the epitaxial growth of high quality and defect free SiGe layer [14,15].…”

“…Breakdown mechanism taking place in the device, (b) latch-up condition (V CE = V LD ), (c) latch-down condition (V CE = V LD ) F I G U R E 3 Calibration of I C -V CE characteristics of metalsemiconductor-metal Schottky biristor[10] …”

Microwave Impedance Spectroscopy and Temperature Effects on the Electrical Properties of Au/BN/C Interfaces

“…They have been used for plasmonic hot-electron photodetection applications [1] like solar blind ultraviolet photodetectors [2]. They are also used as a bistable resistor for digital imaging applications [3]. In addition, the MSM devices are employed as varactors, which can reach cutoff frequency up to 308 GHz [4].…”