Screen printed boron emitters for solar cells

Recart, F.; Freire, I.; Perez, Laura Miranda; Lago-Aurrekoetxea, R.; Jimeno, J.C.; Bueno, Gorka

doi:10.1016/j.solmat.2007.02.005

Cited by 29 publications

(11 citation statements)

References 12 publications

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“…To realize the theoretical efficiency limit of a silicon solar cell, the backside aluminum must be replaced with dielectric and local contacts 3. To accomplish this, boron becomes an alternative material to provide the back surface field (BSF) for p‐type substrate and p‐n junction on n‐type silicon solar cells 4, 5. Also, the bowing of the conventional full aluminum rear surface is the critical problem that needs to be solved 6.…”

Section: Introductionmentioning

confidence: 99%

High efficiency screen printed bifacial solar cells on monocrystalline CZ silicon

Yang

Ebong

et al. 2011

Progress in Photovoltaics

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We present industrialized bifacial solar cells on large area (149 cm2) 2 cm CZ monocrystalline silicon wafers processed with industrially relevant techniques such as liquid source BBr3 and POCl3 open‐tube furnace diffusions, plasma enhanced chemical vapor deposition (PECVD) SiNx deposition, and screen printed contacts. The fundamental analysis of the paste using at boron‐diffused surface and the bifacial solar cell firing cycle has been investigated. The resulting solar cells have front and rear efficiencies of 16.6 and 12.8%, respectively. The ratio of the rear JSC to front JSC is 76.8%. It increases the bifacial power by 15.4% over a conventional solar cell at 20% of 1‐sun rear illumination, which equals to the power of a conventional solar cell with 19.2% efficiency. We also present a bifacial glass–glass photovoltaic (PV) module with 30 bifacial cells with the electrical characteristics. Copyright © 2010 John Wiley & Sons, Ltd.

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Section: Introductionmentioning

confidence: 99%

High efficiency screen printed bifacial solar cells on monocrystalline CZ silicon

Yang

Ebong

et al. 2011

Progress in Photovoltaics

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“…it is clear that by improving screen printed contacts to boron emitter, with FF of 78 %, an n-base cell efficiency of 20% can be achieved by inkjet boron emitter technology. These results are quite competitive or better than existing technologies such as boron tribromide (BBr 3 ) diffusion, boric acid spin-on, and screen printing [6,7,8].…”

Section: Introductionmentioning

confidence: 94%

High efficiency n-type silicon solar cell with a novel inkjet-printed boron emitter

Ryu

Upadhyaya

Das

et al. 2011

2011 37th IEEE Photovoltaic Specialists Conference

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Formation of boron emitters for mass production of lowcost and high efficiency n-type silicon solar cells is a major challenge in the PV industry. In this paper, we report on the successful fabrication of high efficiency screen-printed 19.3% n-type silicon cell with V oc of 646 mV, J sc of 39.4 mA/cm 2 , and FF of 75.6 %, using boron dopant ink applied by inkjet printing to create boron-doped emitter. The detailed internal quantum efficiency (IQE) analysis showed excellent front surface recombination velocity (FSRV) of 15,000 cm/s and back surface recombination velocity (BSRV) of 66 cm/s. This demonstrates for the first time the promise of boron dopant ink for high performance n-type silicon solar cells.

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“…The other is harmful boron‐rich layer which may result in a low yield in mass production, although it has been well addressed in laboratories. To overcome the above issues, there has been continuous progress on other potential B doping techniques, such as screen printing B paste, inkjet printing, laser doping, chemical vapor deposition (CVD) of borosilicate glass with a furnace drive‐in including atmospheric CVD …”

Section: Introductionmentioning

confidence: 99%

Boron Implanted Junction with In Situ Oxide Passivation and Application to p‐PERT Bifacial Silicon Solar Cell

Huang

Wang

Mandrell

et al. 2019

Physica Status Solidi (a)

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Boron junction and its passivation is an active topic in photovoltaic research due to its importance to passivated emitter and rear totally-diffused (PERT) bifacial Si solar cell. In this paper, a systematic study on boron-implanted junction, its passivation and ohmic contact formation, as well as application to p-PERT bifacial cells has been presented. More specifically, the impact of junction profile and surface passivation on boron junction quality, which can be influenced by implantation and in situ oxidation anneal parameters is studied. Good-quality boron emitter and metal/p þ -Si ohmic contact are achieved, as demonstrated by emitter saturation current of 5-30 fA cm À2 and specific contact resistance of 3-6 mΩ cm À1 . A roadmap for a p-PERT bifacial cell using fully ion implanted (boron and phosphorus) technology, based on which p-PERT bifacial cells demonstrats front side efficiency of 20.6% (open circuit voltage of 658 mV), rear side efficiency of %17% and bifaciality factor of 0.82-0.87 is also presented. Effective cell efficiency of %22% is achieved with a Halm IV-tester with white transporting belts that enhance reflection about 10% from the cell rear.

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Screen printed boron emitters for solar cells

Cited by 29 publications

References 12 publications

High efficiency screen printed bifacial solar cells on monocrystalline CZ silicon

High efficiency screen printed bifacial solar cells on monocrystalline CZ silicon

High efficiency n-type silicon solar cell with a novel inkjet-printed boron emitter

Boron Implanted Junction with In Situ Oxide Passivation and Application to p‐PERT Bifacial Silicon Solar Cell

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