Abstract:Optical transitions between conduction subbands of GaAs-AIGaAs quantum wells are of considerable interest for mid-infrared (MIR, applications due to their very large oscillator strengths 1. Indeed, the dipole moments associated with intersubband transitions only involve matrix elements between envelope wave functions which translate into effective dipole lengths scaling like the quantum well thickness 2. For comparison, the dipole length associated with an interband transition would be much shorter, of the ord… Show more
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