Second-harmonic generation in silicon carbide polytypes

Niedermeier, S.; Schillinger, H.; Sauerbrey, R.; Adolph, B.; Bechstedt, F.

doi:10.1063/1.124459

Cited by 47 publications

(40 citation statements)

References 17 publications

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“…5 the calculated real and imaginary parts of the second-order optical susceptibility χ (2) (−2ω, ω, ω) for the four selected zigzag nanotubes [(6,0), (12,0), (20,0), and (24,0)]. As for the single SiC sheet, the second harmonic generation coefficients χ (2) (−2ω, ω, ω) for the zigzag SiC-NTs are significant in [43] 86, -8.6 17.3 Niedermeier et al [44] 18±8, -4±2 24±10, -4±2 the entire range of the optical photon energy ( ω). Indeed, they can be up to ten times larger than that of bulk SiC polytypes (see Figs.…”

Section: Second-order Optical Susceptibilitymentioning

confidence: 99%

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Second-harmonic generation and linear electro-optical coefficients of SiC polytypes and nanotubes

Guo

2008

Phys. Rev. B

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The second-order nonlinear optical susceptibility (χ (2) abc ) and linear electro-optical coefficient (r abc ) of a large number of single-walled zigzag, armchair and chiral SiC nanotubes (SiC-NTs) as well as bulk SiC polytypes (2H-, 4H-, 6H-and 3C-SiC) and single graphitic SiC sheet have been calculated from first-principles. The calculations are based on density functional theory in the local density approximation and highly accurate full-potential projector augmented-wave method is used. Both the zigzag and chiral SiC-NTs are found to exhibit large second-order nonlinear optical behavior with the χ (2) abc and r abc coefficients being up to ten-times larger than that of bulk SiC polytypes, and also being up to thirteen-times larger than the counterparts of the corresponding BN-NTs, indicating that SiC-NTs are promising materials for nonlinear optical and opto-electric applications. The prominant features in the spectra of χ

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Section: Second-order Optical Susceptibilitymentioning

confidence: 99%

“…Finally, we would consider that the agreement between our results and the experimental values is rather good (Table III), given the large uncertainties in the available experimental data. [43,44] B. Single graphitic SiC sheet…”

Section: A Bulk Sic Polytypesmentioning

confidence: 99%

Second-harmonic generation and linear electro-optical coefficients of SiC polytypes and nanotubes

Guo

2008

Phys. Rev. B

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“…2(b)] owing to the high phonon frequencies of the Si-C dimers [23]. Among the most prominent features, we can also list a high second-order nonlinearity [19,24,25], excellent mechanical robustness (Mohs hardness 9 [26]), and outstanding thermal properties. The decomposition temperature is 2830°C [27], and the thermal conductivity of 490 Wm −1 K −1 is surpassed only by diamond [21].…”

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confidence: 99%

Coherent Field Transients below 15 THz from Phase-Matched Difference Frequency Generation in 4H-SiC

Fischer

Bühler

Kurihara

et al. 2017

Conference on Lasers and Electro-Optics

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We experimentally demonstrate tunable, phase-matched difference frequency generation covering the spectral region below 15 THz using 4H-SiC as a nonlinear crystal. This material combines a non-centrosymmetric lattice and strong birefringence with broadband transparency at low optical frequencies. Thorough refractive index measurements in the terahertz spectral range allow us to calculate phase-matching conditions for any near-infrared pump laser source. 4H-SiC is also exploited as a detector crystal for electro-optic sampling. The results allow us to estimate the effective second-order nonlinear coefficient. The generation of coherent radiation in the spectral region between 5 and 15 THz is a major challenge for solid-state sources, despite its relevant interest for the study of fundamental excitations in condensed matter systems. In fact, the corresponding energy range from 20 to 60 meV includes various molecular vibrations [1][2][3], as well as optical phonons in solids [4,5] and low-energy collective modes in correlated materials such as superconductors [6]. Quantum cascade lasers [7] provide a continuous wave source tunable in this spectral window. Pulses can also be produced by photoconductive switches [8,9] or via laser-induced air plasma generation [10][11][12]. However, to obtain stable and intense electric fields combined with femtosecond temporal resolution, the workhorse approach relies on the generation of coherent field transients by frequency mixing processes in nonlinear crystals [13,14]. A typical setup is based on difference frequency generation (DFG) driven by an ultrafast laser system. Unfortunately, in the elusive spectral region between 5 and 15 THz, most nonlinear crystals applied for DFG such as GaSe, AgGaS 2 (AGS), and BBO, exhibit strong optical phonon resonances that lead to reststrahlen bands where radiation cannot penetrate into the material [see Fig. 1(a)]. In addition, isotropic materials such as ZnTe are lacking birefringence and, therefore, do not allow adjustment of phase matching. Furthermore, organic nonlinear crystals [15] show heavily structured spectra in the frequency range of interest and display inherently low damage thresholds. Recently, preliminary investigations by Naftaly et al.[16] suggested 4H-SiC as a crystal suitable for nonlinear optics in the multi-terahertz range. So far, this outstanding material has received little attention in experimental works that are limited to the demonstration of nonlinear properties in the near infrared [17], mid-infrared DFG above the optical phonon frequencies [18], and emission of 1 THz radiation from 6H-SiC [19].In this Letter, we experimentally demonstrate the application of 4H-SiC for the generation of ultrashort field transients tunable between 5 and 15 THz, and its use as an electro-optic sampling (EOS) crystal.SiC exhibits a large plurality of polymorphs with hexagonal, cubic, and rhombohedral symmetry [20]. Owing to its technological relevance, high-quality synthetic crystals of 4H-SiC are available. Its lattice, sketched in...

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“…i,j,k , and electro-optical r i,j,k coefficients were predicted from ab initio calculations in 3C, 4H and 6H [71] and measured [72][73][74][75] in 4H and 6H polytypes. Second-order nonlinear optical coefficients are at the core of the physics of nonlinear optical processes; their knowledge and high values are essential to increase the efficiency of frequency conversion.…”

Section: Nonlinear Effectsmentioning

confidence: 99%

Silicon Carbide for Novel Quantum Technology Devices

Castelletto¹,

Rosa²,

Johnson³

2015

Advanced Silicon Carbide Devices and Processing

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Silicon carbide (SiC) has recently been investigated as an alternative material to host deep optically active defects suitable for optical and spin quantum bits. This material presents a unique opportunity to realise more advanced quantum-based devices and sensors than currently possible. We will summarise key results revealing the role that defects have played in enabling optical and spin quantum measurements in this material such as single photon emission and optical spin control. The great advantage of SiC lies in its existing and well-developed device processing protocols and the possibilities to integrate these defects in a straightforward manner. There is particular current interest in nanomaterials and nanophotonics in SiC that could, once realised, introduce a new platform for quantum nanophotonics and in general for photonics. We will summarise SiC nanostructures exhibiting optical emission due to multiple polytypic bandgap engineering and deep defects. The combination of nanostructures and in-built paramagnetic defects in SiC could pave the way for future single-particle and single-defect quantum devices and related biomedical sensors with single-molecule sensitivity. We will review relevant classical devices in SiC (photonics crystal cavities, microdiscs) integrated with intrinsic defects. Finally, we will provide an outlook on future sensors that could arise from the integration of paramagnetic defects in SiC nanostructures and devices.Keywords: Silicon carbide deep defects, Paramagnetic properties, Optical-detected magnetic resonance, Single-photon sources IntroductionThe most common and technologically advanced SiC polytypes are 4H-SiC and 6H-SiC with hexagonal structures and 3C-SiC with a zinc-blende crystal structure (cubic). High-quality © 2015 The Author(s). Licensee InTech. This chapter is distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.bulk single-crystal 3C-SiC can be grown epitaxially on different substrates, most notably on silicon. This has led to many exciting devices fabricated with this particular polytype [1]. SiC has a wide bandgap (2.4-3.2 eV depending on the polytype), a high thermal conductivity, the ability to sustain high electric fields before breakdown and the highest maximum current density, making it ideal for high-power electronics [2]. More recently, it has become a notable material in the field of quantum computing and spintronics as several of its intrinsic defects are associated with an electron spin that can be used as quantum bit [3,4]. To enhance solid-state quantum systems scalability, a fully integrated device with quantum control should be built; thus, quantum systems should be part of the material used to fabricate the final device. Other solid-state quantum systems fully integrated into a functional device [5][6][7] operate at cryogenic temperatures (4 K or below),...

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Second-harmonic generation in silicon carbide polytypes

Abstract: We report simultaneous measurements and ab initio calculations of the second-order nonlinear coefficients for SiC polytypes. Our measured values for χzzz (χzxx) are 18 (−4) pm/V for 4H SiC and 24 (−4) pm/V for 6H SiC. They are in good agreement with our theoretical results.

Cited by 47 publications

References 17 publications

Second-harmonic generation and linear electro-optical coefficients of SiC polytypes and nanotubes

Second-harmonic generation and linear electro-optical coefficients of SiC polytypes and nanotubes

Coherent Field Transients below 15 THz from Phase-Matched Difference Frequency Generation in 4H-SiC

Silicon Carbide for Novel Quantum Technology Devices

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