Journal of Crystal Growth
 1997
DOI: 10.1016/s0022-0248(97)00153-x
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Selective area vapor-phase epitaxy and structural properties of Hg1 − xCdxTe on sapphire

N.V. Sochinskii
1
,
V. Muñoz
2
,
S. Bernardi
3
et al.
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Cited by 7 publications
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References 21 publications
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Hg1−xCdxTe vapor deposition on CdZnTe substrates by Closed Space Sublimation technique

Rubio
1
,
Sochinskii
2
,
Repiso
3
et al. 2017
Journal of Crystal Growth
3
0
1
0
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Hg1−xCdxTe vapor deposition on CdZnTe substrates by Closed Space Sublimation technique

Rubio
1
,
Sochinskii
2
,
Repiso
3
et al. 2017
Journal of Crystal Growth
3
0
1
0
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Hg1−xCdxI2/CdTe-based heterostructures as a new high Z material for radiation detectors: VPE growth of micro-pixel arrays

Sochinskii
1
2006
Nuclear Instruments and Methods in Physics Research Section A:
1
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Numerical study of the growth conditions in an MOCVD reactor: application to the epitaxial growth of HgTe

Tena‐Zaera
1
,
Mora‐Seró
2
,
Martı́nez-Tomás
3
et al. 2002
Journal of Crystal Growth
6
1
4
0
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