Selective electrochemical deposition of indium in-between silicon nanowire arrays fabricated by metal-assisted chemical etching

Germanium electrodeposition into porous silicon for silicon-germanium alloying

“…The disadvantage of this approach is the presence of residual fusible metal contents in the composites, as well as (in cases when high temperatures are utilized) relatively poor reproducibility. As we have previously assumed [19] , the ec-LLS process can be carried out on PS which had its pores filled with fusible metal particles in advance, enabling selective growth of germanium crystallites inside the pores. Heat treatment of the resulting structures leads to the formation of Si 1-х Ge x alloys with high germanium contents [20] .…”