Selective gas detection with high-temperature operated metal oxides using catalytic filters

Fleischer, Maximilian; Kornely, Susanne; Weh, Thomas; Frank, J.; Meixner, H.

doi:10.1016/s0925-4005(00)00513-x

Cited by 132 publications

(73 citation statements)

References 9 publications

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“…Its n-type conduction is achieved when it is synthesized under reducing conditions, due to the oxygen vacancies which acts as shallow donors [1]. β-Ga 2 O 3 has various technological applications, such as transparent conducting oxides, optical emitters for ultraviolet radiation, flat-panel displays, spin tunneling junctions, and high temperature gas sensing [2][3]. Fig.1 Indium oxide (In 2 O 3 ) is a wide band-gap transparent semiconductor (direct band gap of 3.55 − 3.75 eV and indirect bandgap of 2.6 eV), which can be widely used in electronic and optoelectronic devices, flat panel displays, gas sensors, and photocatalysis [7][8][9].…”

Section: Detection Of Pollutantsmentioning

confidence: 99%

“…Tungsten oxide (WO 3 ) is an n-type semiconductor and it shows good response in NH 3 [21][22][23][24][25][26].…”

Section: Detection Of Pollutantsmentioning

confidence: 99%

“…Thermal expansion coefficient matched with alumina used as thin film gas sensor substrate. Its nanostructure is very useful in detecting organic alcohols, NH 3 and NO [27][28][29][30][31].…”

Section: Detection Of Pollutantsmentioning

confidence: 99%

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Use of nanotechnology for clean and safer future environment

Guha¹

2017

ijsrm

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Section: Detection Of Pollutantsmentioning

confidence: 99%

“…Tungsten oxide (WO 3 ) is an n-type semiconductor and it shows good response in NH 3 [21][22][23][24][25][26].…”

Section: Detection Of Pollutantsmentioning

confidence: 99%

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Use of nanotechnology for clean and safer future environment

Guha¹

2017

ijsrm

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“…Tin oxide is the most widely used metal oxide semiconductor in gas sensing because of its capability to detect combustible and hazardous gases such as methane, LPG, CNG, CO, CO 2 , Cl 2 , H 2 S etc [1][2][3][4]. It is an n-type semiconductor of tetragonal structure with band gap energy about 3.6 eV at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Preparation, Characterization and Gas Sensing Performance of Pure SnO2 Thin Films Deposited using Physical Vapour Deposition Technique

Thakare

Patil²,

Deshmukh³

et al. 2016

IRA-JTE

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Nanocrystalline SnO 2 thin films were successfully prepared using Physical Vapour Deposition technique and were annealed at 400 o C. Structural, morphological, elemental, compositional, optical, and IntroductionSince last few decades there has been an increasing interest to prepare inexpensive SnO 2 thin films. Tin oxide is the most widely used metal oxide semiconductor in gas sensing because of its capability to detect combustible and hazardous gases such as methane, LPG, CNG, CO, CO 2 , Cl 2 , H 2 S etc [1][2][3][4]. It is an n-type semiconductor of tetragonal structure with band gap energy about 3.6 eV at room temperature. It is cheap, nontoxic and has strong oxidizing power, high photochemical corrosive resistance, good electrical, optical and piezoelectric behavior. In recent years, semiconductor metal oxide films have received considerable attention because of their potential applications [5] such as photochemical and photoconductive devices in LCD, lithium-ion batteries,[6-8] a transport conductive electrode for solar cells [9,10] a gas sensing material for gas sensor devices [11], transport conducting electrodes [12] etc. The majority of the applications adopted SnO 2 as the sensing material due to its high sensitivity and stability at lower operational temperatures, in spite of its poor selectivity [13].Out of many thin film preparation techniques such as chemical vapour deposition [14], spray pyrolysis [15], sputtering [16], activated reactive evaporation [17], etc. Physical Vapour Deposition method is straight forward and simple one. Because of deposition in high vacuum and at room temperature, this technique produces contamination free uniform thin films. In the present study, we used Hind Hivac vacuum depositing unit for depositing pure tin onto the cleaned glass substrates at room temperature. The films were then heated in muffle furnace at 200 o C for 24 hrs to allow oxidation. The so formed pure SnO 2 thin films were then annealed at 300, 400 and 500 o C each for 2 hrs. Structural, morphological, electrical, optical and gas sensing characterizations of the samples were studied.

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“…Thus, different solutions have been investigated. The first consists in changing material by the addition of catalytic elements, as for metallic oxides [18,19,27], or by the modification of layer morphology as a result of deposition process and post-deposition treatments, as for phthalocyanines [28]. Optimization of working conditions, like temperature [15,29], is the second way to reach optimal detection.…”

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confidence: 99%

Improvement in real time detection and selectivity of phthalocyanine gas sensors dedicated to oxidizing pollutants evaluation

et al. 2005

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illustrate the selectivity of CuPc sensors towards ozone, obtained by our methodology. We have shown that ozone selectivity is especially improved for short time of exposure (few minutes) and for phthalocyanine layer maintained at low temperature (80°C). For optimal conditions, our microsytem exhibits a threshold lower than 10 ppb, a resolution lower than 10 ppb, and good reproducibility of measurements. Performances obtained in real urban atmosphere are satisfying to ensure real time evaluation of ozone during several days. Longterm stability and the detection of NO 2 by associating chemical filters to our microsystem will be also discussed.

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Selective gas detection with high-temperature operated metal oxides using catalytic filters

Cited by 132 publications

References 9 publications

Use of nanotechnology for clean and safer future environment

Use of nanotechnology for clean and safer future environment

Preparation, Characterization and Gas Sensing Performance of Pure SnO2 Thin Films Deposited using Physical Vapour Deposition Technique

Improvement in real time detection and selectivity of phthalocyanine gas sensors dedicated to oxidizing pollutants evaluation

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