2014
DOI: 10.1063/1.4894170
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Selenization of Sb2Se3 absorber layer: An efficient step to improve device performance of CdS/Sb2Se3 solar cells

Abstract: Thermal evaporation and characterization of superstrate CdS/Sb2Se3 solar cells Appl. Phys. Lett. 104, 173904 (2014); 10.1063/1.4874878 Photoelectric performance of TiO 2 nanotube array photoelectrodes cosensitized with CdS/CdSe quantum dots Appl. Phys. Lett. 96, 153104 (2010); 10.1063/1.3386525 Effect of internal surface area on the performance of Zn O ∕ In 2 S 3 ∕ Cu SCN solar cells with extremely thin absorber Appl. Phys. Lett. 92, 153107 (2008);

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Cited by 161 publications
(111 citation statements)
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“…Device efficiency (Fig. 5d) increased about 0.3 power points (from 5.32% to 5.66%) when stored in air ambient for up to 45 days without encapsulation, in good agreement with our previous report of thermally evaporated Sb2Se3 solar cells 19,29 . Damp-heat testing (85℃ and 85% humidity, no encapsulation) of the same device showed a slightly reduced device performance, from an initial 5.67% efficiency to 5.39% after 10 h testing and to 5.16% after 100 h testing.…”
supporting
confidence: 78%
“…Device efficiency (Fig. 5d) increased about 0.3 power points (from 5.32% to 5.66%) when stored in air ambient for up to 45 days without encapsulation, in good agreement with our previous report of thermally evaporated Sb2Se3 solar cells 19,29 . Damp-heat testing (85℃ and 85% humidity, no encapsulation) of the same device showed a slightly reduced device performance, from an initial 5.67% efficiency to 5.39% after 10 h testing and to 5.16% after 100 h testing.…”
supporting
confidence: 78%
“…Within one year, solution processed Sb 2 Se 3 sensitized solar cells fabricated using a single-source precursor have obtained a power-conversion efficiency (PCE) of 3.21% by Seok’s group3, and superstrate Sb 2 Se 3 solar cells fabricated via thermal evaporation have achieved 3.7% device efficiency by our group6, suggesting the promise of Sb 2 Se 3 for photovoltaic absorber application.…”
mentioning
confidence: 87%
“…Mater. [50,51] Besides, a good ohmic contact between absorber and Au electrode can be formed through adjusting the band offset. Basing on above values, the W d is calculated to be 181 nm which is only 37% of the actual thickness of the absorber (485 nm).…”
Section: Wwwadvelectronicmatdementioning
confidence: 99%