Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching

Cho, Seungho; Cui, Yun; Tappertzhofen, Stefan; Kuršumović, A.; Lee, Shinbuhm; Lu, Ping; Jia, Quanxi; Fan, Meng; Jian, Jie; Wang, Haiyan; Hofmann, Stephan; MacManus‐Driscoll, Judith L.

doi:10.1038/ncomms12373

Cited by 91 publications

(86 citation statements)

References 53 publications

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“…Similar phenomenon has also been observed in other films, e.g. SrTiO 3 25, BiFeO 3 26. With increasing the maximum voltage to 3 V applied in the same sequence as Fig.…”

Section: Resultssupporting

confidence: 85%

Reversible voltage dependent transition of abnormal and normal bipolar resistive switching

Wang

Chen

et al. 2016

Sci Rep

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Clear understanding the mechanism of resistive switching is the important prerequisite for the realization of high performance nonvolatile resistive random access memory. In this paper, binary metal oxide MoOx layer sandwiched by ITO and Pt electrodes was taken as a model system, reversible transition of abnormal and normal bipolar resistive switching (BRS) in dependence on the maximum voltage was observed. At room temperature, below a critical maximum voltage of 2.6 V, butterfly shaped I-V curves of abnormal BRS has been observed with low resistance state (LRS) to high resistance state (HRS) transition in both polarities and always LRS at zero field. Above 2.6 V, normal BRS was observed, and HRS to LRS transition happened with increasing negative voltage applied. Temperature dependent I-V measurements showed that the critical maximum voltage increased with decreasing temperature, suggesting the thermal activated motion of oxygen vacancies. Abnormal BRS has been explained by the partial compensation of electric field from the induced dipoles opposite to the applied voltage, which has been demonstrated by the clear amplitude-voltage and phase-voltage hysteresis loops observed by piezoelectric force microscopy. The normal BRS was due to the barrier modification at Pt/MoOx interface by the accumulation and depletion of oxygen vacancies.

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“…Similar phenomenon has also been observed in other films, e.g. SrTiO 3 25, BiFeO 3 26. With increasing the maximum voltage to 3 V applied in the same sequence as Fig.…”

Section: Resultssupporting

confidence: 85%

Reversible voltage dependent transition of abnormal and normal bipolar resistive switching

Wang

Chen

et al. 2016

Sci Rep

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“…46,52 As shown in Figure 13, in SDC-SrTiO 3 VAN films, 52 the resistance value in the lowresistive state decreased with an increase of the atomic ratio of Sm to Ce, up to 20%. This trend is highly consistent with Sm concentration dependence of ionic conductivity in SDC, indicating that the RS phenomena in SDC-SrTiO 3 VAN films occur homogeneously in SDC nanocolumns.…”

Section: A Engineering Nanocolumn Stoichiometrymentioning

confidence: 99%

“…46,51,52 The central image in Figure 3 shows the resistance change in SDC-SrTiO 3 VAN films when an external voltage is applied. When a positive voltage is applied to the as-grown sample, the device resistance changes from low to high values.…”

Section: A Resistive Switching Phenomenamentioning

confidence: 99%

“…Very recently, as shown in Figure 1(d), new and novel device architectures, vertically aligned nanostructured (VAN) films, [43][44][45][46][47][48][49][50][51][52][53] were developed to overcome several issues in conventional ionic devices as mentioned above. Basically, the development of ionic devices by using VAN films started from a similar motivation of laterally aligned heteroepitaxy films.…”

Section: New Device Architectures For Ionic Devicesmentioning

confidence: 99%

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Research Update: Fast and tunable nanoionics in vertically aligned nanostructured films

Lee

MacManus‐Driscoll

2017

APL Materials

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This review provides the design principles to develop new nanoionic applications using vertically aligned nanostructured (VAN) thin films, incorporating two phases which self-assemble in one film. Tunable nanoionics has attracted great attention for energy and device applications, such as ion batteries, solid oxide fuel cells, catalysts, memories, and neuromorphic devices. Among many proposed device architectures, VAN films have strong potential for nanoionic applications since they show enhanced ionic conductivity and tunability. Here, we will review the recent progress on state-of-the-art nanoionic applications, which have been realized by using VAN films. In many VAN systems made by the inclusion of an oxygen ionic insulator, it is found that ions flow through the vertical heterointerfaces. The observation is consistent with structural incompatibility at the vertical heteroepitaxial interfaces resulting in oxygen deficiency in one of the phases and hence to oxygen ion conducting pathways. In other VAN systems where one of the phases is an ionic conductor, ions flow much faster within the ionic conducting phase than within the corresponding plain film. The improved ionic conduction coincides with much improved crystallinity in the ionically conducting nanocolumnar phase, induced by use of the VAN structure. Furthermore, for both cases Joule heating effects induced by localized ionic current flow also play a role for enhanced ionic conductivity. Nanocolumn stoichiometry and strain are other important parameters for tuning ionic conductivity in VAN films. Finally, double-layered VAN film architectures are discussed from the perspective of stabilizing VAN structures which would be less stable and hence less perfect when grown on standard substrates.

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“…4a and 4b show representative crosssectional high-angle annular dark-field (HAADF) scanning transmission electron microscope (STEM) images of the BFO25-BTO75 and BFO75-STO25 films on SRO-buffered STO substrates, respectively. The HAADF-STEM images indicate high uniformity of the composition without phase separation of the different metal oxides [71]. Large range observations of the different composition films also show no phase separation.…”

Section: ∆ C Crtmentioning

confidence: 82%

Strongly enhanced dielectric and energy storage properties in lead-free perovskite titanate thin films by alloying

et al. 2018

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A B S T R A C TLead-free perovskite oxide thin films prepared by alloying of titanates and materials with lower melting points are shown to have enhanced ferroelectric and dielectric properties. BaTiO 3 (or SrTiO 3 ) with 25% addition of BiFeO 3 has much improved crystalline perfection because of the lower melting point of the BiFeO 3 giving enhanced growth kinetics. The maximum dielectric peak temperature of BaTiO 3 is increased by~200°C and leakage currents are reduced by up to a factor of~100. The loss tangent reduces up to 300°C, with a factor of > 14 reduction at room temperature. The dielectric breakdown strength is higher by a factor of~3 (> 2200 kV cm ) and from room temperature up to 500°C the dielectric constant is > 1000. Also, a low variation of dielectric constant of~9% from room temperature to 330°C is obtained, compared to~110% for BaTiO 3 . The maximum polarization (P max ) is double that of BaTiO 3 , at 125.3 μC cm −2. The film has high energy storage densities of > 52 J cm −3 at 2050 kV cm −1 , matching Pb-based ferroelectric films. The strongly improved performance is important for applications in energy storage and in high temperature (up to 300°C) capacitors as well as wider application in other electronic and energy technologies.

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Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching

Cited by 91 publications

References 53 publications

Reversible voltage dependent transition of abnormal and normal bipolar resistive switching

Reversible voltage dependent transition of abnormal and normal bipolar resistive switching

Research Update: Fast and tunable nanoionics in vertically aligned nanostructured films

Strongly enhanced dielectric and energy storage properties in lead-free perovskite titanate thin films by alloying

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