Self-assembled semiconductor nanostructures: climbing up the ladder of order

Growth and annealing of InAs quantum dots on pre-structured GaAs substrates

“…Top-down techniques such as electron beam lithography (EBL), local oxidation or mechanical nanoindentation have proven to be viable in order to define QD nucleation sites [5][6][7]. Common to those approaches is the creation of small holes on the substrate surface, which leads to selective QD nucleation at the desired locations.…”

Highly ordered arrays of In(Ga)As quantum dots on patterned GaAs(001) substrates

“…For novel single QD devices, such as single photon sources [5,6] or optically triggered single electron turnstile devices [7], a strict control over the lateral positions of the QDs is desirable. The most promising approach to force QDs into lateral order seems to be the growth on patterned substrates [8][9][10][11]. However, recent studies [9,10,12] tend to produce a statistical distribution of several QDs on the pre-patterned sites or show just small areas with sufficient site control.…”

Site-controlled InAs/GaAs quantum dots emitting at telecommunication wavelength

“…In . For single quantum dots and molecules a strong similarity in these characteristics was found, resulting in similar photoluminescence spectra 18 . However the smaller size of the QD molecules causes a spectral blue-shift which we believe contributes to the spectral ensemble broadening of the QD emission in our spectra.…”