Self-biased planar millimeter wave notch filters based on magnetostatic wave excitation in barium hexagonal ferrite thin films

Abstract

The use of M-type barium hexagonal ferrite ͑BaM͒ thin films for self-biased planar millimeter wave notch filters was demonstrated for the first time. The BaM film was grown by pulsed laser deposition and showed a remanent to saturation magnetization ratio of 0.99 and a 60 GHz ferromagnetic resonance linewidth of about 300 Oe. The filter consisted of a BaM film element positioned on the top of a coplanar waveguide and showed a band-stop response at 53 GHz for zero external fields. This filtering response resulted from power absorption due to magnetostatic wave excitation in the BaM film.

M-Type Barium Hexagonal Ferrite Films

“…Section 3.1 describes the deposition of low-loss, high-remanent-magnetization BaM thin films on sapphire substrates by PLD techniques. 10 Section 3.2 discusses the deposition of BaM thin films on metallic substrates by the MOD method. 15 Section 3.3 reviews the deposition of BaM thin films on semiconductor substrates by PLD and MBE techniques.…”

“…13,14 Section 3.4 describes the fabrication of BaM thick films on semiconductor substrates by screen printing. 16,17 Section 4 reviews the demonstration of BaM thin film-based mm-wave notch filters 10,24 and phase shifters. 21 Finally, Section 5 discusses future work in the field of BaM materials and devices.…”

“…16,17 The device demonstration includes both numerical 20,21,22 and experimental efforts. 18,21,22,23,10,24 The devices demonstrated include phase shifters, 21 filters, 22,23,10 ,24 circulators, 18 and isolators. 19 This chapter reviews the main advances made in the field of BaM materials and devices over the past five years.…”

“…Emphasis has been placed on the optimization of deposition processes for low-loss, self-biased BaM thin films, 7,8,9,10 the deposition of BaM thin films on "non-conventional" substrates, such as semiconductor substrates 11,12,13,14 and metallic substrates, 15 the fabrication of BaM thick films on semiconductor substrates, 16,17 the demonstration of BaM-based planar mm-wave devices, 18,19,20,21,22,23,10,24 the development of BaM-based ferromagnetic/ferroelectric heterostructures, 25,26,27,28,29 and the study of multiferroic effects in single-phase BaM materials. 30 A variety of different techniques have been used to fabricate BaM film materials.…”

“…30 A variety of different techniques have been used to fabricate BaM film materials. These include pulsed laser deposition (PLD), 7,8,9,10,11,12,28,31 liquid phase epitaxy (LPE), 32,33,34,35 RF magnetron sputtering, 36,37,19,38,39,40 molecular beam epitaxy (MBE), 14 metallo-organic decomposition (MOD), 15 chemical vapor deposition (CVD), 41 and screen printing. 16,17 The device demonstration includes both numerical 20,21,22 and experimental efforts.…”