Self-heating-induced electrical and optical switching in high quality VO2 films controlled with current pulses

Güneş, Ozan; Koughia, Cyril; Zhang, Chunzi; Belev, George; Wen, Shi-Jie; Yang, Q.; Kasap, S. O.

doi:10.1007/s10854-021-06895-2

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“…[ 32 ]. The difference between the hysteresis properties of the samples is due to the difference in the nature of electrical and structural (observed optically) MIT [ 33 , 53 ]. Figure 11 gives the critical temperatures and phase transition parameters of VO 2 films deposited on sapphire substrates obtained in σ vs. T measurements.…”

Section: Resultsmentioning

confidence: 99%

Effect of Substrate Temperature on the Structural, Optical and Electrical Properties of DC Magnetron Sputtered VO2 Thin Films

et al. 2022

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This study focuses on the effect of the substrate temperature (TS) on the quality of VO2 thin films prepared by DC magnetron sputtering. TS was varied from 350 to 600 °C and the effects on the surface morphology, microstructure, optical and electrical properties of the films were investigated. The results show that TS below 500 °C favors the growth of V2O5 phase, whereas higher TS (≥500 °C) facilitates the formation of the VO2 phase. Optical characterization of the as-prepared VO2 films displayed a reduced optical transmittance (T˜) across the near-infrared region (NIR), reduced phase transition temperature (Tt), and broadened hysteresis width (ΔH) through the phase transition region. In addition, a decline of the luminous modulation (ΔT˜lum) and solar modulation (ΔT˜sol) efficiencies of the as-prepared films have been determined. Furthermore, compared with the high-quality films reported previously, the electrical conductivity (σ) as a function of temperature (T) reveals reduced conductivity contrast (Δσ) between the insulating and metallic phases of the VO2 films, which was of the order of 2. These outcomes indicated the presence of defects and unrelaxed lattice strain in the films. Further, the comparison of present results with those in the literature from similar works show that the preparation of high-quality films at TS lower than 650 °C presents significant challenges.

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Section: Resultsmentioning

confidence: 99%