Self-limiting laser thermal process for ultra-shallow junction formation of 50-nm gate CMOS

Shima, Akio; Ashihara, Hiroshi; Mine, T.; Horiuchi, M.; Wang, Y.; Talwar, S.; Hiraiwa, Atsushi

doi:10.1109/iedm.2003.1269329

Cited by 12 publications

(12 citation statements)

References 2 publications

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“…1) The mass spectrum peaked at 210 AMU, and the depth profile of the 10 keV implant was shallower than the 0.5 keV boron implantation. Millisecond annealing with laser 6) or flash lamps 7) is illustrated in Fig.4, and the thermal profile of millisecond annealing is shown in comparison with Spike-RTA. 2) The ion source generates gas- cluster ions composed of several thousands of boron atoms, and at the extraction voltage of 5 kV, the equivalent boron energy would be several eV.…”

Section: Ultra Shallow Junction Formationmentioning

confidence: 99%

Evolution of Ion Implantation Technology and its Contribution to Semiconductor Industry

Tsukamoto¹,

Kuroi²,

Kawasaki³

et al. 2011

AIP Conference Proceedings

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Industrial aspects of the evolution of ion implantation technology will be reviewed, and their impact on the semiconductor industry will be discussed. The main topics will be the technology's application to the most advanced, ultra scaled CMOS, and to power devices, as well as productivity improvements in implantation technology. Technological insights into future developments in ion-related technologies for emerging industries will also be presented.

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Section: Ultra Shallow Junction Formationmentioning

confidence: 99%

Evolution of Ion Implantation Technology and its Contribution to Semiconductor Industry

Tsukamoto¹,

Kuroi²,

Kawasaki³

et al. 2011

AIP Conference Proceedings

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“…P OSTSPIKE annealing methods, such as flash-lamp annealing [1]- [3], solid-phase regrowth [4], and laser annealing (LA) [5], are currently being actively investigated for the scaling of source and drain (S/D) junction depth and MOSFET performance improvements. In terms of LA, laser spike annealing (LSA), which is milli-to microseconds annealing realized with continuous wave (CW) laser irradiation and very fast stage scanning, was recently reported to be promising for the 45-nm node [6].…”

Section: Introductionmentioning

confidence: 99%

Merits of heat assist for melt laser annealing

Shibahara

Eto

Kurobe

2006

IEEE Trans. Electron Devices

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In this paper, the potential for sub-10-nm junction formation of partial-melt laser annealing (PMLA), which is a combination of solid-phase regrowth and heat-assisted laser annealing (HALA), is demonstrated. HALA and PMLA are effective for reducing laser-energy density for dopant activation and for improving heating uniformity of device structure. The absence of melting at the dopant profile tail for PMLA results in a negligibly small diffusion at this region. A high activation rate is achievable by melting the upper part of the amorphous-silicon layer. The obtained sheet resistance of 10-nm-deep junctions was about 700 Ω/sq. for both n + /p and p + /n junctions. These results imply that PMLA is applicable for much shallower junction formation.

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“…8,9 Therefore, to reduce the enhanced diffusion and to obtain a highly activated dopant profile, excimer laser annealing ͑ELA͒ has also been studied. 10 Over the past few years there has been considerable interest in the effect of fluorine on boron diffusion in silicon to suppress boron diffusion. [11][12][13][14][15][16][17][18][19] Research on the effects of fluorine from a BF 2 + implant reveals that shallower junctions could be obtained when BF 2 + was implanted instead of boron.…”

mentioning

confidence: 99%

Ultrashallow p[sup +]∕n Junction Prepared by Low Energy BF[sub 3] Plasma Doping and KrF Excimer Laser Annealing

Lee

Baek

Heo

et al. 2006

Electrochem. Solid-State Lett.

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We have investigated the activation and deactivation of the 1 kV BF 3 plasma doping ͑PLAD͒ with excimer laser annealing ͑ELA͒. Half of the dopants were activated by ELA, and the deactivation was dramatically increased after the postannealing. We have confirmed that 1 kV BF 3 PLAD did not form an amorphous layer at the substrate using X-ray transmission electron microscopy ͑X-TEM͒ and that boron and fluorine segregated after annealing using secondary ion mass spectroscopy profiles and plane-view TEM. Based on the results, we proved that fluorine can suppress boron diffusion, although it retards the activation and increases the deactivation of BF 3 PLAD with ELA.As the dimensions of devices become smaller, the size and junction depths of devices must be made shallower to prevent the short channel effect. According to The International Technology Roadmap for Semiconductors, ͑ITRS͒ the junction depth of the lightly doped drain ͑LDD͒ region may be as shallow as roughly 20-30 nm in a 0.1 m metal oxide semiconductor field effect transistor ͑MOSFET͒ device. 1 Compared with the n + /p junction, it is difficult to form an untrashallow p + /n junction due to boron channeling and transientenhanced diffusion ͑TED͒ which is related to extra interstitials generated during the implantation. 2,3 Therefore, many studies have been conducted to discover alternative methods for shallower p + /n junctions. 4-6 Plasma doping ͑PLAD͒, which is a method to create a shallow junction, has been studied as a replacement for conventional ion implantation. 7 However, at a low doping energy of 1 kV or less, TED during activation annealing is inevitable. 8,9 Therefore, to reduce the enhanced diffusion and to obtain a highly activated dopant profile, excimer laser annealing ͑ELA͒ has also been studied. 10 Over the past few years there has been considerable interest in the effect of fluorine on boron diffusion in silicon to suppress boron diffusion. [11][12][13][14][15][16][17][18][19] Research on the effects of fluorine from a BF 2 + implant reveals that shallower junctions could be obtained when BF 2 + was implanted instead of boron. 11-13 Also, it has been reported that fluorine was implanted separately into the boron to characterize the effect of the fluorine on boron diffusion. This work shows that the fluorine implant reduced boron TED and increased boron activity. [14][15][16][17][18][19] In conjunction with these studies, the deactivation of dopants also should be considered because the postannealing process is accompanied with the deactivation of dopants during device fabrication. In the case of boron, Takamura et al. 20 have already shown that the deactivation of boron in laser-annealed silicon is stable.To be conclusive further studies are needed to investigate how the low energy BF 3 PLAD with ELA is effective for forming an ultrashallow junction. In this paper, we report the electrical properties of the low-energy BF 3 PLAD activated by ELA and the behavior of boron and fluorine after the annealing along with time-offlight ͑TOF͒ second...

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Self-limiting laser thermal process for ultra-shallow junction formation of 50-nm gate CMOS

Cited by 12 publications

References 2 publications

Evolution of Ion Implantation Technology and its Contribution to Semiconductor Industry

Evolution of Ion Implantation Technology and its Contribution to Semiconductor Industry

Merits of heat assist for melt laser annealing

Ultrashallow p[sup +]∕n Junction Prepared by Low Energy BF[sub 3] Plasma Doping and KrF Excimer Laser Annealing

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