Abstract:We present the fabrication and the testing of self sensing submicron thick piezoresistive cantilevers. Two kind of piezoresistive transducers (piezoresistor and MOSFET transistor) are integrated into the cantilever in the (100) direction, by n-type implantation (As). Cantilevers with both types of transducers are successfully fabricated, showing a yield of 100% and a standard deviation in the electrical characteristics of 6% and 10% for the piezoresistors and MOSFETs, respectively. For the best piezoresistive … Show more
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