Self-sustaining conducting state and bipolar ionizing Gunn domains in pulse avalanche GaAs diodes

Abstract

Domain instability in nonequilibrium electron-hole plasma leads to the formation of narrow moving regions of the ionizing electric field—collapsing Gunn domains. In pulse power electronics devices based on gallium arsenide, impact ionization in collapsing domains acts as an efficient mechanism for the generation of nonequilibrium carriers at low voltages and weak average electric fields.