Self-terminating growth in hexagonal boron nitride by metal organic chemical vapor deposition

Paduano, Qing; Snure, Michael; Bondy, James M; Zens, Timothy

doi:10.7567/apex.7.071004

Cited by 38 publications

(32 citation statements)

References 29 publications

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“…Development of a self-terminating CVD/MOCVD process on insulating substrates similar to what has been done on single-crystal transition metals in UHV [6,7] is desirable for producing few-to mono-layer films with uniform thickness over large areas. In our previous report on growth of BN by MOCVD [8], we showed that atomically smooth few-layer thick BN can be achieved under a self-terminating growth mode at high V/III ratios.…”

Section: Introductionmentioning

confidence: 88%

Effect of surface nitridation on the epitaxial growth of few-layer sp2 BN

Snure

Paduano

Kiefer

2016

Journal of Crystal Growth

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Boron Nitride is a promising 2D dielectric material for use in numerous electronic applications. In order to realize this potential, a process for producing atomically thin layers on microelectronics-compatible substrates is desirable. In this paper we describe an approach to epitaxially grow few-layer sp 2 BN directly on an insulating substrate, using metal-organic chemical vapor deposition (MOCVD). We also elucidate the effect of sapphire surface nitridation on the growth characteristics. We compare the effect of nitridation on the growth rate, surface morphology and structure across a wide range of V/III ratios. Depending on the V/III ratio, two different growth modes were identified: at low V/III 3D island growth is dominant and at high V/III the growth transitions to a self-terminating mode. Under self-terminating growth a film thickness of 1.5 nm is typically achieved. Surface nitridation was found to improve nucleation, promoting self-terminating growth, and resulting in atomically smooth films. Reflection high energy electron diffraction (RHEED) patterns reveal the epitaxial relationship between BN and sapphire to be [1-100]‖[11-20] and [0001]‖[0001]. Growth at low V/III ratios without surface nitridation produced films with large hexagonal holes, which could not be completely filled by extending the growth time. Through surface nitridation, these holes were eliminated, producing continuous smooth films.

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Section: Introductionmentioning

confidence: 88%

Effect of surface nitridation on the epitaxial growth of few-layer sp2 BN

Snure

Paduano

Kiefer

2016

Journal of Crystal Growth

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“…The TO ⊥ peak position for the freestanding h-BN film is the closest to that for exfoliated h-BN nanosheets 25 and CVD grown h-BN thin films. 26,27 The softening effect has been reported on Ni(111), on which h-BN forms a commensurate layer, resulting in a π−d orbital hybridization that downshifts the TO ⊥ phonon significantly. 16 Although the TO ⊥ peak positions of h-BN film on Ru(0001) and Pt foil are slightly softened compared with bulk h-BN, the amount of softening is very small, suggesting that the overall h-BN-substrate interaction is not very strong, as both metals form incommensurate structures with h-BN.…”

Section: The Journal Of Physical Chemistry Lettersmentioning

confidence: 97%

Studying Edge Defects of Hexagonal Boron Nitride Using High-Resolution Electron Energy Loss Spectroscopy

Nai

Zhang

2015

J. Phys. Chem. Lett.

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Studying the phonons of hexagonal boron nitride (h-BN) is important for understanding its thermal, electronic, and imaging applications. Herein, we applied high-resolution electron energy loss spectroscopy (HREELS) to monitor the presence of edge defects in h-BN films. We observed an edge phonon at 90.5 meV with the initial formation of island-like domains on Ru(0001), which subsequently weakens with respect to the bulk phonon as the islands congregate into a film. The presence of a weak edge phonon peak even at full surface coverage of the h-BN film indicates the sensitivity of HREELS in detecting line defects. A shoulder peak at ∼160 meV assignable to sp(3) bonded modes was attributed to grain boundaries arising from misaligned domains. In addition, the strengths of substrate interaction and the rippling of the h-BN film can be judged from the shift in the phonon energy of the out-of-plane TO⊥ mode.

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“…6(a) due to the self-terminating effect. 18,19 Despite similar thickness of the films, however, there is a significant change in optical absorption spectra, as shown in Fig. 6(b).…”

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confidence: 93%

“…1(c). The both h-BN films consist of only a few atomic layers which is due to self-terminating effect occurring at low pressure and high V/III ratio growth conditions, 18,19 but the films have a different saturated thickness depending on the carrier gas. It is also experimentally observed that thickness of the sample is no longer increasing when the total pulse cycle number is increased further (not shown here).…”

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confidence: 99%

“…Kobayashi et al, demonstrated MOCVD-grown h-BN as a releasing layer for transferring the GaN-based LED epitaxial structure grown on the h-BN onto foreign flexible substrates. [15][16][17] Recently, Q. S. Paduano et al, reported self-terminating effect in MOCVD growth of h-BN 18 and investigated effects of growth parameters including reactor pressure, and V/III ratio, defined as molar flow ratio between NH 3 and triethylborane (TEB) which are source of nitrogen and boron respectively, on thickness of MOCVD-grown h-BN. 19 X.…”

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Role of hydrogen carrier gas on the growth of few layer hexagonal boron nitrides by metal-organic chemical vapor deposition

et al. 2017

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Few layer hexagonal boron nitride (h-BN) films were grown on 2-inch sapphire substrates by using metal-organic chemical vapor deposition (MOCVD) with two different carrier gases, hydrogen (H2) and nitrogen (N2). Structural, optical and electrical properties of the MOCVD-grown h-BN films were systematically investigated by various spectroscopic analyses and electrical conduction measurement. Based on the experimental findings including narrower X-ray photoelectron spectra, reduced intensity of the shoulder peaks in near edge X-ray absorption fine structure spectra, and decreased electrical conduction by more than three orders of magnitude when H2 carrier gas is employed, it was concluded that H2 has an advantage over N2 as the carrier gas for MOCVD growth of h-BN which is attributed to the healing of crystalline defects by etching and regrowth processes occurring under the pulsed source-injection mode.

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Self-terminating growth in hexagonal boron nitride by metal organic chemical vapor deposition

Cited by 38 publications

References 29 publications

Effect of surface nitridation on the epitaxial growth of few-layer sp2 BN

Effect of surface nitridation on the epitaxial growth of few-layer sp2 BN

Studying Edge Defects of Hexagonal Boron Nitride Using High-Resolution Electron Energy Loss Spectroscopy

Role of hydrogen carrier gas on the growth of few layer hexagonal boron nitrides by metal-organic chemical vapor deposition

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