Semiconductor behaviors of low loading multiwall carbon nanotube/poly(dimethylsiloxane) composites

Hu, Chenxi; Liu, C. H.; Chen, L. Z.; Fan, Shanhui

doi:10.1063/1.3223777

Cited by 23 publications

(20 citation statements)

References 16 publications

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“…The Coulomb gap reached 0.36 eV for nanocomposites filled with 0.35 wt% CNTs at room temperature (in the high-elastic state), and it became much smaller in the glassy state or at high MWCNTs loadings. The semiconductor behavior make the composites has promising applications as flexible electronic materials, such as field effect transistors [168].…”

Section: 4 2 3 4 S E M I C O N D U C T O R E L a S T O M E R E mentioning

confidence: 99%

Transport performance in novel elastomer nanocomposites: Mechanism, design and control

Guo

Tang

Zhang

2016

Progress in Polymer Science

138

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Section: 4 2 3 4 S E M I C O N D U C T O R E L a S T O M E R E mentioning

confidence: 99%

Transport performance in novel elastomer nanocomposites: Mechanism, design and control

Guo

Tang

Zhang

2016

Progress in Polymer Science

138

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“…Although this is a key for the wide adoption of carbon nanocomposite technology, high performances are not often reproducible. For example, the MWNTs‐PDMS (polydimethylsiloxane) composites were reported to have percolation concentration ranging between 0.2 to 5 wt%,12–13 still orders of magnitude higher than the 0.0025 wt% value reported for some other MWNTs‐polymer systems 8. The large discrepancy may be attributed to the quality of nanotubes (e.g., aspect ratio, impurities14), the use of surfactants and functionalization,15–17 and the choice of dispersion and fabrication methods that ultimately determines the size distribution, orientation and homogeneity of fillers 18–23.…”

Section: Introductionmentioning

confidence: 99%

Tailoring the Electrical Properties of Carbon Nanotube–Polymer Composites

Huang

Terentjev

2010

Adv Funct Materials

134

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Advances in functionality and reliability of nanocomposite materials require careful formulation of processing methods to ultimately realize the desired properties. An extensive study of how the variation in fabrication process would affect the mechanism of conductivity and thus the final electrical properties of the carbon nanotube–polymer composite is presented. Some of the most widely implemented procedures are addressed, such as ultrasonication, melt shear mixing, and addition of surfactants. It is hoped that this study could provide a systematic guide to selecting and designing the downstream processing of carbon nanocomposites. Finally, this guide is used to demonstrate the fabrication and performance of a stretchable (pliable) conductor that can reversibly undergo uniaxial strain of over 100%, and other key applications are discussed.

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“…When the MWNT loading gets higher, the adjacent nanotubes gradually joint, which reduces the Coulomb charging energy, leading to a narrow Coulomb band gap. [ 33 ] Meanwhile, the elasticity of the composite declines dramatically. The resistance varies with temperature T according to…”

Section: Resultsmentioning

confidence: 98%

“…[5][6][7][8] Ever evolving be used to construct fl exible electronics such as diodes, transistors, and photodetectors. [ 33,34 ] The performances of the composites can be easily tuned by changing the MWNT loadings, rather than incorporating functionality by molecular design like conventional organic semiconductors. [ 5,34 ] With the excellent mechanical fl exibility and well fi lm-processing ability of the composites, it is possible for them to prepare fl exible thin-fi lm transistors.…”

Section: Introductionmentioning

confidence: 99%

Deformation Effect on the Electrical Properties of a Flexible Organic Semiconductor composed of Poly(dimethylsiloxane) and Multiwalled Carbon Nanotubes

Zhou

Zhang

Liu

et al. 2016

Adv Elect Materials

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advances in organic semiconductors have fueled many of the developments in the fi eld of fl exible electronics. [9][10][11][12] In comparison with the conventional organic semiconductors, blending organic polymers with low dimension conductive materials seems able to offer the great possibility to construct the devices with high conductivity and controllability. [13][14][15][16] Poly(dimethylsiloxane) (PDMS), a typical example of insulating organic polymers, has always been a very popular material for the fabrication of fl exible electronic devices for its numerous advantages including high elasticity, good stability, and biocompatibility. However, in most cases, PDMS is usually taken on as substrates of fl exible devices. [17][18][19][20] Composites merging together the excellent properties of low dimension conductive materials and PDMS with the high tunability have a rich prospect in different research fi elds, yet the reports are much fewer. [21][22][23][24] Currently, lots of efforts have been made in research of low dimension conductive fi llers, such as carbon nanotubes (CNTs) and graphene, for their unique properties and potential applications. [25][26][27][28] CNTs, which are hollow, cylindrical nanometer-sized fi bers with high aspect ratio, charge carrier mobility, and fl exibility, are promising candidates for fl exible electronics. [29][30][31][32] In our previous work, we presented a fl exible polymer semiconductor composed of PDMS and multiwalled carbon nanotubes (MWNTs), and researched the contacts in the metal/composite junctions for the fi rst time. The Coulomb gap variable range hopping (CG VRH) model could satisfactorily explain the semiconductor behavior in the composites, and Schottky diodes prepared by curing the 0.35 wt% composite between gold (Au) and copper (Cu) electrodes showed a typical P-type rectifi ed behavior with a high Schottky barrier height (SBH) of 0.78 eV. Field effect transistors with a high effective mobility of 1.98 cm 2 V −1 s −1 and photovoltaic devices with a stable open-circuit voltage of 0.4 V have been fabricated by taking advantage of the semiconductor property of the 0.35 wt% composite. These results suggest that the MWNT-PDMS composites can be treated as usual P-type semiconductors and can Organic semiconductors are the main elements for the development of fl exible electronics due to their excellent fl exibility and large-area manufacturing at low cost. Here, the effect of deformation on the electrical properties of a highly fl exible organic semiconductor composed of poly(dimethylsiloxane) and multiwalled carbon nanotubes is investigated. The results reveal that their resistances increase with increasing deformation quantities, and in contrast to the outcomes of the compressed samples, the resistances of the higher multiwalled carbon nanotube loading composites show greater changes than those of the lower ones under certain bending angles or stretching ratios. Moreover, the property of the 0.35 wt% (the percolation threshold of the composite) sample is highly st...

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Semiconductor behaviors of low loading multiwall carbon nanotube/poly(dimethylsiloxane) composites

Cited by 23 publications

References 16 publications

Transport performance in novel elastomer nanocomposites: Mechanism, design and control

Transport performance in novel elastomer nanocomposites: Mechanism, design and control

Tailoring the Electrical Properties of Carbon Nanotube–Polymer Composites

Deformation Effect on the Electrical Properties of a Flexible Organic Semiconductor composed of Poly(dimethylsiloxane) and Multiwalled Carbon Nanotubes

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