Semiconductor/Ceramic Nanocomposites: Synthesis, Characterization, and Properties

Abstract

A survey of the preparation of semiconductor nanocrystal‐ceramic nanocomposite materials and related nanostructured materials is provided. Nanocomposite materials described here contain elemental semiconductors (Si and Ge), II–VI and IV–VI semiconductors (ZnE, CdE, and PbE where E = S, Se, Te), and III–V semiconductors (GaE, AlE, and InE where E = N, P, As) embedded in various ceramic matrices. Semiconductor nanocrystals and nanoparticles were prepared using a variety of physical, chemical, and electrochemical synthesis strategies. Sol‐gel processing, and single‐ or multiple‐source precursors were used to prepare semiconductor nanoparticles with diameters as small as 2–4 nm or as large as 50–200 nm. Formation of the semiconductor nanophase was carried out by reduction of mixed‐metal oxides, pyrolysis of well‐characterized precursor molecules or in situ generated precursor complexes, chemical vapor deposition (CVD), and electrochemical reduction.