Semiconductor-superconductor hybrid electronics

Duzer, T. Van; Kumar, Sam

doi:10.1016/0011-2275(90)90201-m

Cited by 28 publications

(7 citation statements)

References 24 publications

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“…The most successful previous attempts at creating a superconductor-to-semiconductor interface consist of a superconducting preamplifier stage combined with a semiconductor amplifier stage 9,14,15 . This approach is effective at translating signal levels, but is power-constrained.…”

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confidence: 99%

“…At present, there are only two known ways to generate 1,000 mV directly from a superconducting output: connect many few-millivolt devices (such as Josephson junctions) in series 12 , or allow a superconducting nanowire to latch 13 . The most successful previous attempts at creating a superconductor-to-semiconductor interface consist of a superconducting preamplifier stage combined with a semiconductor amplifier stage 9,14,15 . This approach is effective at translating signal levels, but is power-constrained.…”

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confidence: 99%

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A superconducting thermal switch with ultrahigh impedance for interfacing superconductors to semiconductors

et al. 2019

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A number of current approaches to quantum and neuromorphic computing use superconductors as the basis of their platform or as a measurement component, and will need to operate at cryogenic temperatures. Semiconductor systems are typically proposed as a top-level control in these architectures, with low-temperature passive components and intermediary superconducting electronics acting as the direct interface to the lowest-temperature stages.The architectures, therefore, require a low-power superconductorsemiconductor interface, which is not currently available. Here we report a superconducting switch that is capable of translating low-voltage superconducting inputs directly into semiconductor-compatible (above 1,000 mV) outputs at kelvin-scale temperatures (1 K or 4 K). To illustrate the capabilities in interfacing superconductors and semiconductors, we use it to drive a light-emitting diode (LED) in a photonic integrated circuit, generating photons at 1 K from a low-voltage input and detecting them with an on-chip superconducting single-photon detector. We also characterize our devices timing response (less than 300 ps turn-on, 15 ns turn-off), output 1

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confidence: 99%

A superconducting thermal switch with ultrahigh impedance for interfacing superconductors to semiconductors

et al. 2019

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“…Electrical transport of superconductor‐normal conductor (SN) junctions has shown a variety of interesting mesoscopic phenomena . Given a particular superconductor, the normal conductor part of the junction can be a metal, semimetal, or degenerate semiconductor . At the interface of an SN junction, the current is converted from a dissipative flow carried by normal electrons to a non‐dissipative supercurrent carried by Cooper pairs.…”

Section: Introductionmentioning

confidence: 99%

High Quality Superconductor–Normal Metal Junction Made on the Surface of MoS₂ Flakes

Chen

Lei

Yumin

et al. 2017

Physica Status Solidi (b)

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A superconductor–normal metal (SN) junction is fabricated on the surface of a few‐layer MoS2 flake. Superconductivity is induced by ionic liquid gating, and an h‐BN flake is used to locally separate ionic liquid from the surface of MoS2. The h‐BN covered channel remains semiconducting, therefore an SN junction forms at the interface between the exposed and h‐BN covered MoS2 channel. Transport properties at the SN junction are studied at low temperatures and under magnetic fields. The probability of observing Andreev reflection is discussed based on the BTK model.

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“…On the other hand, superconductive electronics based on Josephson devices of low temperature supercond~ictors (LTS) and high temperature superconductors (HTS) have been developed year by year. Recently, hybrid circuits consisting of semiconductor and superconductor devices have attracted much interests to utilize the advantages of each technology [3,4]. Superconducting Josephson integrated circuits (ICs) have demonstrated a promising potential for fast and low power devices for use in digital systems, e.g., Josephson computers [5].…”

Section: Introductionmentioning

confidence: 99%

Threshold Voltage Characteristics of Superconductor Gate nMOSFET at 4.2 K

Kurosawa¹,

Maezawa²,

Aoyagi³

et al. 1996

J. Phys. IV France

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We propose a high mobility superconductor gate nMOSFET using undoped Si as the substrate. We have studied superconducting NbN gate nMOSFETs fabricated on p-type Si, undoped Si and n-type Si substrate, respectively. The nMOSFETs on undoped Si and n-type Si have operated properly at 4.2 K. The transconductance of nMOSFETs on undoped Si substrate is higher than that of nMOSFET on p-type Si. The difference in transconductance is attributed to the difference of impurity density in channels. The observed threshold voltages of NbN gate nMOSFFiTs on p-type Si, undoped Si and n-type Si have little difference at 4.2K.

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Semiconductor-superconductor hybrid electronics

Cited by 28 publications

References 24 publications

A superconducting thermal switch with ultrahigh impedance for interfacing superconductors to semiconductors

A superconducting thermal switch with ultrahigh impedance for interfacing superconductors to semiconductors

High Quality Superconductor–Normal Metal Junction Made on the Surface of MoS₂ Flakes

Threshold Voltage Characteristics of Superconductor Gate nMOSFET at 4.2 K

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Semiconductor-superconductor hybrid electronics

Cited by 28 publications

References 24 publications

A superconducting thermal switch with ultrahigh impedance for interfacing superconductors to semiconductors

A superconducting thermal switch with ultrahigh impedance for interfacing superconductors to semiconductors

High Quality Superconductor–Normal Metal Junction Made on the Surface of MoS2 Flakes

Threshold Voltage Characteristics of Superconductor Gate nMOSFET at 4.2 K

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Product

Resources

About

High Quality Superconductor–Normal Metal Junction Made on the Surface of MoS₂ Flakes