Separation of the threshold fields for charge-density-wave motion in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">NbSe</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>using elastic strain

Yt, Tseng; Gx, Tessema; Mj, Skove

doi:10.1103/physrevb.48.4871

Cited by 7 publications

(3 citation statements)

References 27 publications

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“…If this were the case, one would also expect a similar stress induced enhancement of E T for the lower CDW. However, previous studies have shown that stress does not enhance E T for the lower CDW 9,10 . In addition, Y. Tseng et al have shown 9 in the case of the upper CDW, E T can be separated into two components, one attributed to contact pinning, and the other to bulk impurity pinning.…”

Section: Discussionmentioning

confidence: 71%

“…In this case, E T was estimated from the plot of the chordal resistance R vs E or from the numerical derivative ∆V/∆I. Previous studies 9,10 have shown that uniaxial stress affects E T indirectly by ε induced changes in T P and directly by enhancing the pinning strength. It was shown that the indirect effect can be disentangled by conducting the experiments at a constant reduced temperature t = T /T p (ε) where T p (ε) is defined at the peak in dR(ε)/dT .…”

Section: B Effect Of ε On the Upper Cdwmentioning

confidence: 99%

“…The presence of a threshold field E T , above which the resistance decreases, is the signature that the CDW can be made to move under a small electric field 3,4 . The dependence of E T on temperature (T), number of impurities (n i ) 5,6 , contact position, size 7 , pressure 8 and uniaxial stress 9,10 , has been extensively reported. Here we report further studies on the effect of elastic, uniaxial stress σ on E T for the upper CDW in NbSe 3 .…”

Section: Introductionmentioning

confidence: 99%

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NbSe3:Effect of uniaxial stress on the threshold field and fermiology

Kuh¹,

Tseng²,

Wagner³

et al. 1998

Phys. Rev. B

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We have measured the effect of elastic strain ǫ on the threshold field ET for the motion of the higher temperature charge density wave(CDW) in NbSe3. We find that ET exhibits a critical behavior, ET ∼ (1 − ǫ/ǫc) γ where ǫc is about 2.6%, γ ∼1.2. This expression remains valid over more than two decades of ET , up to the highest fields of about 1.5 kV/m measured using pulse techniques. Neither γ nor ǫc is very sensitive to the impurity content of the sample. The transition temperature is linear with ǫ, and dTP /dǫ = 10 K/% shows no anomaly near ǫc. The slope of the narrow band noise frequency vs. the CDW current does not change appreciably with ǫ. Shubnikov-de Haas measurements show that the extremal area of the Fermi surface decreases with increasing ǫ. We conclude that there is a very intimate relationship between pinning and the Fermiology in NbSe3.

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Section: Discussionmentioning

confidence: 71%

Section: B Effect Of ε On the Upper Cdwmentioning

confidence: 99%