Session 14 Detectors, sensors and displays — Image sensors

Abstract

This session addresses the latest developments in infrared, visible and ultraviolet sensors. New developments in the flashgate fabrication of backside illuminated CCDs will be reported by James Janesick. These have been of increasing importance for scientific use in the UV, EUV, and soft X-ray regions of the spectrum. The flash fabrication allows high built-in fields which enhance the sweep-out of carriers, so as to achieve extremely high quantum efficiencies. Nakamura et al. will report a non-destructive readout MOS imager which also features charge gain at each pixel. Wadsworth et al. have succeeded in fabricating a 640 megapixel/sec 512x512 interline transfer virtual phase CCD imager with less than a 500 psec frame time. This device has 64 output channels and operates with a parallel register clock having a 300ns pulse width.Kataoka will discuss three-dimensional optical integrated sensor implementation using (SOI) technology with specific application to modelling of the retina. Multilayer levels of photodetectors digitizers, and select logic layers will be discussed.Orihara and Oda will discuss detailed design considerations for dual channel read-out registers for high density CCD image sensors. This has become increasingly important for high density sensors that must be free of ultra-fine patterning and where low power consumption is desired.The use of SO1 technology for image sensing will also be discussed by Senda et al. with an emphasis on the reduction of smear noise and improving the noise equivalent exposure as a result of reduced sense-line capacitance.Three dimensional analytic modelling of photovoltaic detector arrays has been achieved and shown to agree with experimental results for relative spectral response, for both Hg0.775 Cd0.225 Te and InSb diode detectors. The paper deals primarily with photocurrent crosstalk in arrays operated in the photovoltaic mode.