Shallow defects in Cu2ZnSnS4

Hönes, Katja; Zscherpel, Elisabeth; Scragg, Jonathan J.; Siebentritt, Susanne

doi:10.1016/j.physb.2009.08.206

Cited by 80 publications

(51 citation statements)

References 12 publications

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“…The determined activation energies are E a1 = 13 ± 2 meV, E a2 = 27 ± 3 meV and E a3 = 7 ± 2 meV. These values are very close to those determined in the related compound Cu 2 ZnSnS 4 by Hones et al [16]. We propose a similar model of recombination including two acceptor and one donor.…”

Section:   With Constantsupporting

confidence: 89%

“…The spectral position and the excitation power dependent behaviour of the EX feature suggests that this band can be attributed to a recombination of excitons. Excitonic luminescence in the related chalcogenide component Cu 2 ZnSnS 4 has been reported by Hones et al [16]. However no excitonic luminescence has so far been reported in CZTSe due to the low quality of the material.…”

Section:   With Constantmentioning

confidence: 85%

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Optical properties of high quality Cu2ZnSnSe4 thin films

Luckert

Hamilton

Yakushev

et al. 2011

Applied Physics Letters

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Cu2ZnSnSe4 thin films, fabricated on bare or molybdenum coated glass substrates by magnetron sputtering and selenisation, were studied by a range of techniques. Photoluminescence spectra reveal an excitonic peak and two phonon replicas of a donor-acceptor pair (DAP) recombination. Its acceptor and donor ionisation energies are 27 and 7 meV, respectively. This demonstrates that high-quality Cu2ZnSnSe4 thin films can be fabricated. An experimental value for the longitudinal optical phonon energy of 28 meV was estimated. The band gap energy of 1.01 eV at room temperature was determined using optical absorption spectra

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Section:   With Constantsupporting

confidence: 89%

Section:   With Constantmentioning

confidence: 85%

Optical properties of high quality Cu2ZnSnSe4 thin films

Luckert

Hamilton

Yakushev

et al. 2011

Applied Physics Letters

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“…First a strong temperature gradient was applied, as reported by Hönes et al [36], so that all the precursor material reacts with the transporting agent and it is transported towards the cold end of the ampoule to form a cluster homogenized at the atomic scale (Fig. 2a).…”

Section: Pre-treatment and Crystal Growthmentioning

confidence: 99%

Crystal growth of Cu2ZnSnS4 solar cell absorber by chemical vapor transport with I2

Colombara

Delsante

Borzone

et al. 2013

Journal of Crystal Growth

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Single crystals of Cu 2 ZnSnS 4 have been produced within sealed quartz ampoules via the chemical vapour transport technique using I 2 as the transporting agent. The effects of temperature gradient and I 2 load on the crystal habit and composition are considered. Crystals have been analysed with XRD, SEM, and TEM for compositional and structural uniformities at both microscopic and nanoscopic levels. The synthesized crystals have suitable (I 2 -load dependent) properties and are useful for further solar absorber structural and physical characterizations. A new chemical vapour transport method based on longitudinally isothermal treatments is attempted. Based on a proposed simplistic mechanism of crystal growth, conditions for crystal enlargement with the new method are envisaged.

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“…Some ambiguity exists regarding PL of CZTS as previous luminescence studies of CZTS single crystals have claimed that the observed luminescence is due to impurities giving rise to donor acceptor pair (DAP) emission. 18,19 More recent studies have proposed a model of fluctuating potentials 4,20 initially developed by Levanyuk and Osipov. 21 Hall measurements have shown that the CZTS system has high doping levels, around 2 Â 10 20 cm À3 , with high levels of compensation predominantly from native defects.…”

Section: Introductionmentioning

confidence: 99%

Luminescence of Cu2ZnSnS4 polycrystals described by the fluctuating potential model

Halliday

Claridge

Goodman

et al. 2013

Journal of Applied Physics

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The growth of Cu2ZnSnS4 (CZTS) polycrystals from solid state reaction over a range of compositions, including the regions which produce the highest efficiency photovoltaic devices, is reported. X-ray measurements confirm the growth of crystalline CZTS. Temperature and intensity dependent photoluminescence (PL) measurements show an increase in the energy of the main CZTS luminescence peak with both increasing laser power and increasing temperature. Analysis of the PL peak positions and intensity behavior demonstrates that the results are consistent with the model of fluctuating potentials. This confirms that the polycrystals are heavily doped with the presence of a large concentration of intrinsic defects. The behavior of the main luminescence feature is shown to be qualitatively similar over a broad range of compositions although the nature and amount of secondary phases vary significantly. The implications for thin-film photovoltaic devices are discussed.

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Shallow defects in Cu2ZnSnS4

Cited by 80 publications

References 12 publications

Optical properties of high quality Cu2ZnSnSe4 thin films

Optical properties of high quality Cu2ZnSnSe4 thin films

Crystal growth of Cu2ZnSnS4 solar cell absorber by chemical vapor transport with I2

Luminescence of Cu2ZnSnS4 polycrystals described by the fluctuating potential model

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